Document
www.eicsemi.com
TH97/2478
TH09/2479
IATF 0113686 SGS TH07/1033
BYG20D - BYG20J
PRV : 200 - 600 Volts Io : 1.5 Amperes
FEATURES :
* Glass passivated junction * Low profile package * Ideal for automated placement * Low reverse current * Soft recovery characteristics * Ultrafast reverse recovery time * Pb / RoHS Free
ULTRAFAST AVALANCHE RECTIFIERS
SMA
2.3 2.1
1.5 1.1
0.2
5.65 5.35 4. 6 4. 2
0.27
2.5
0.13
2.9
2.1
2.5
MECHANICAL DATA :
* Case : SMA Molded plastic * Epoxy : UL94V-O rate flame retardant * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 0.060 gram (Approximately)
2.1 1.7
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise noted.
RATING
Maximum Repetitive Peak Reverse Voltage
Maximum Average Forward Current
Peak Forward Surge Current 10 ms single half
sine wave superimposed on rated load
Maximum Instantaneous Forward Voltage (1) Maximum DC Reverse Current
Maximum Reverse Recovery Time
at IF = 1 A, Tj = 25 °C at IF = 1.5 A, Tj = 25 °C at VR = VRRM, Tj = 25 °C at VR = VRRM, Tj = 100 °C
( IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A) Typical Thermal Resistance, Junction to Lead
Typical Thermal Resistance, Junction to Ambient (2)
Pulse energy in avalanche mode, non repetitive
(inductive load switch off) I(BR)R = 1A, Tj = 25 °C Operating Junction and Storage Temperature Range
Notes : (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Mounted on epoxy-glass hard tissue
Page 1 of 2
SYMBOL VRRM IF(AV) IFSM
VF IR IR(H) Trr
RӨJL RӨJA ER TJ, TSTG
BYG20D 200
BYG20G 400 1.5
BYG20J 600
UNIT V A
30
A
1.3 V
1.4 1.0
μA 10
75
ns
25
°C/W
150
°C/W
20
mJ
- 55 to + 150
°C
Rev. 04 : February 18, 2013
www.eicsemi.com
TH97/2478
TH09/2479
IATF 0113686 SGS TH07/1033
RATING AND CHARACTERISTIC CURVES ( BYG20D - BYG20J )
AVERAGE FORWARD CURRENT, (A)
FIG.1 - MAX. AVERAGE FORWARD CURRENT VS. AMBIENT TEMPERATURE
1.5
1.2
0.9
0.6
0.3 00
VR = VRRM Half Sine Wave
RӨJA 25 ≤ K/W
25
50
75
100
125
150
AMBIENT TEMPERATURE, ( °C)
DIODE CAPACITANCE, (pF)
FIG.2 - DIODE CAPACITANCE VS. REVERSE VOLTAGE
25
f = 1 MHz 20
15
10
5
0
0.1
1.0
10
REVERSE VOLTAGE, (V)
FORWARD CURRENT, (A)
FIG.3 - FORWARD CURRENT VS. FORWARD VOLTAGE
10 TJ = 150 °C
1.0
TJ = 25 °C 0.
0.01
0.001 0
0.5
1.0
1.5
2.0
2.5
3.0
FORWARD VOLTAGE, (V)
REVERSE CURRENT, (μA)
FIG.4 - REVERSE CURRENT VS. JUNCTION TEMPERATURE
100 VR = VRRM
10
1.0
25
50
75
100 125 150
JUNCTION TEMPERATURE, (°C)
Page 2 of 2
Rev. 04 : February 18, 2013
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