Silicon Switching Diode Array
SMD Type
Silicon Switching Diode Array BAW100
Features
For high-speed switching Electrically insulated diodes
Diodes
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Description
SMD Type
Silicon Switching Diode Array BAW100
Features
For high-speed switching Electrically insulated diodes
Diodes
Unit: mm
A b s o lu te M a x im u m R a tin g s T a = 2 5
P aram eter R e ve rs e vo lta g e P e a k re ve rs e vo lta g e F orw ard current S urge forw ard current, t = 1 s T o ta l p o w e r d is s ip a tio n , T S = 3 1 J u n c tio n te m p e ra tu re S torage tem perature range J u n c tio n - a m b ie n t1) J u n c tio n - s o ld e rin g p o in t N ote 1.P ackage m ounted on epoxy pcb 40 m m
Sym bol VR V RM IF IF S P to t Tj T stg
R th JA R th JS
V a lu e 75 85 200 4 .5 330 150
-65 to + 150 500 360
40 m m
1.5 m m /6 cm 2 C u
U n it V V
mA A
mW
K /W K /W
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SMD Type
BAW100
Diodes
Electrical Characteristics Ta = 25
Parameter Breakdown voltage
Symbol VBR
Forward voltage
VF
Reverse current
Diode capacitance Reverse recovery time
IR
Cd trr
Conditions I(BR) = 100 A
IF = 1 mA IF = 10 mA IF = 50 mA IF = 150 mA VR = 75 V VR = 25 V, TA = 150 VR = 75 V, TA = 150 VR = 0 V, f = 1 MHz IF = 10 mA, IR = 10 mA, RL = 100 measured at IR = 1 mA
Min Typ Max Unit
85 V
715
855 1000
mV
1250
1
30 A
50
2 pF
6 ns
Marking
Marking
JSs
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