HIGH SPEED SILICON DIODES
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
HIGH SPEED SILICON DIODES
CL...
Description
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
HIGH SPEED SILICON DIODES
CLL4150
SOD - 80C Mini MELF (LL- 34 )
Polarity: Cathode is indicated by a black band
Hermetically Sealed, Glass Silicon Diodes
Intended for General Purpose use in Computer and Industrial Application
ABSOLUTE MAXIMUM RATINGS DESCRIPTION Repetitive Peak Reverse Voltage Continuous Reverse Voltage Continuous Forward Current Repetitive Peak Forward Current
Non Repetitive Peak Forward Current t=1 µs t=1 ms t=1 s
Power Dissipation up to Ta=25ºC
Storage Temperature
Junction Temperature
SYMBOL VRRM VR *IF IFRM IFSM
*Ptot Tstg Tj
VALUE 75 50 300 600 4.0 1.0 0.5 500
- 65 to 200
200
THERMAL RESISTANCE Junction to tie point
Junction to Ambient in free air
Rth (j-tp) *Rth (j-a)
300 350
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless otherwise specified)
DESCRIPTION
SYMBOL
TEST CONDITION
Forward Voltage
VF IF=1mA IF=10mA
IF=50mA IF=100mA IF=200mA
Reverse Breakdown Voltage
VBR IR=100µA
Reverse Current
IR VR= 50V VR=50V, Tj=150ºC
MIN 0.54 0.66 0.76 0.82 0.87
75
DYNAMIC CHARACTERISTICS Diode Capacitance Reverse Recovery Time
Forward Recovery Time
Cd trr
tfr
*Device mounted on an FR4 printed circuit board
CLL4150Rev201002E
VR=0V, f=1MHz IF=10mA, to IR=1mA,RL=100Ω
Measured @ IR=0.1mA IF=200mA, tr =0.4ns Measured @ VF=1V
.
MAX 0.62 0.74 0.86 0.92 1.00
100 100
2.5 6.0
10
UNIT V V mA mA A A A
mW ºC ºC
K/W K/W
UNIT V V V V V V nA µA
pF ns
ns
Continental Device I...
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