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CLL4150

CDIL

HIGH SPEED SILICON DIODES

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company HIGH SPEED SILICON DIODES CL...


CDIL

CLL4150

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Description
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company HIGH SPEED SILICON DIODES CLL4150 SOD - 80C Mini MELF (LL- 34 ) Polarity: Cathode is indicated by a black band Hermetically Sealed, Glass Silicon Diodes Intended for General Purpose use in Computer and Industrial Application ABSOLUTE MAXIMUM RATINGS DESCRIPTION Repetitive Peak Reverse Voltage Continuous Reverse Voltage Continuous Forward Current Repetitive Peak Forward Current Non Repetitive Peak Forward Current t=1 µs t=1 ms t=1 s Power Dissipation up to Ta=25ºC Storage Temperature Junction Temperature SYMBOL VRRM VR *IF IFRM IFSM *Ptot Tstg Tj VALUE 75 50 300 600 4.0 1.0 0.5 500 - 65 to 200 200 THERMAL RESISTANCE Junction to tie point Junction to Ambient in free air Rth (j-tp) *Rth (j-a) 300 350 ELECTRICAL CHARACTERISTICS (Ta=25ºC unless otherwise specified) DESCRIPTION SYMBOL TEST CONDITION Forward Voltage VF IF=1mA IF=10mA IF=50mA IF=100mA IF=200mA Reverse Breakdown Voltage VBR IR=100µA Reverse Current IR VR= 50V VR=50V, Tj=150ºC MIN 0.54 0.66 0.76 0.82 0.87 75 DYNAMIC CHARACTERISTICS Diode Capacitance Reverse Recovery Time Forward Recovery Time Cd trr tfr *Device mounted on an FR4 printed circuit board CLL4150Rev201002E VR=0V, f=1MHz IF=10mA, to IR=1mA,RL=100Ω Measured @ IR=0.1mA IF=200mA, tr =0.4ns Measured @ VF=1V . MAX 0.62 0.74 0.86 0.92 1.00 100 100 2.5 6.0 10 UNIT V V mA mA A A A mW ºC ºC K/W K/W UNIT V V V V V V nA µA pF ns ns Continental Device I...




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