SMD Type
Transistors
Power Darlington Transistor FMMT634
Features
625mW power dissipation Highest current capability ...
SMD Type
Transistors
Power Darlington
Transistor FMMT634
Features
625mW power dissipation Highest current capability SOT23 darlington Very high hFE
+0.12.4 -0.1
SOT-23
2.9+0.1 -0.1
0.4+0.1 -0.1
3
12 0.95+0.1
-0.1
1.9+0.1 -0.1
0-0.1 +0.10.38
-0.1
+0.10.97 -0.1
+0.11.3 -0.1
0.55 0.4
Unit: mm
0.1+0.05 -0.01
1.Base 2.Emitter 3.collector
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Peak collector current Power dissipation Operating and storage temperature range
Symbol VCBO VCEO VEBO IC ICM Ptot Tj,Tstg
Rating 120 100 12 900 5 625
-55 to +150
Unit V V V mA A
mW
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SMD Type
Electrical Characteristics Ta = 25
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage * Emitter-base breakdown voltage Collector cutoff current Collector Emitter Cut-Off Current Emitter cut-off current
Collector-emitter saturation voltage *
Base-emitter saturation voltage * Base-emitter voltage *
Static Forward Current Transfer Ratio*
Current-gain-bandwidth product Output capacitance Switching times
* Pulse test: tp = 300 ìs; d 0.02.
Marking
Marking
634
FMMT634
Symbol
V(BR)CBO IC=100ìA V(BR)CEO IC=10mA V(BR)EBO IE=100ìA
ICBO VCB=80V ICES VCE=80V IEBO VEB=7V
Testconditons
IC=100mA, IB=1mA IC=250mA, IB=1mA VCE(sat) IC=500mA, IB=5mA IC=900mA, IB=5mA IC=900mA, IB=5mA IC=1A, IB=5mA VBE(sat) IC=1A,IB=5mA VBE(ON) IC=1A,VCE=5V
IC=10mA, VCE=5V
IC=100mA, VCE=5V
hFE IC=1A,...
