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FMMT722 Dataheets PDF



Part Number FMMT722
Manufacturers Kexin
Logo Kexin
Description Switching Transistor
Datasheet FMMT722 DatasheetFMMT722 Datasheet (PDF)

SMD Type TransistIoCrs Switching Transistor FMMT722 Features 625mW power dissipation. IC CONT 2.5A. IC up to 10A peak pulse current. Excellent hfe characteristics up to 10A (pulsed). Extremely low saturation voltage e.g. 10mV typ.. Exhibits extremely low equivalent on-resistance; RCE(sat) . +0.12.4 -0.1 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 12 0.95+0.1 -0.1 1.9+0.1 -0.1 Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Peak collec.

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SMD Type TransistIoCrs Switching Transistor FMMT722 Features 625mW power dissipation. IC CONT 2.5A. IC up to 10A peak pulse current. Excellent hfe characteristics up to 10A (pulsed). Extremely low saturation voltage e.g. 10mV typ.. Exhibits extremely low equivalent on-resistance; RCE(sat) . +0.12.4 -0.1 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 12 0.95+0.1 -0.1 1.9+0.1 -0.1 Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Peak collector current Collector current Base current Power dissipation Operating and storage temperature range Symbol VCBO VCEO VEBO ICM IC IB Ptot Tj,Tstg Rating -70 -70 -5 -3 -1.5 -500 625 -55 to +150 Unit V V V A A mA mW 0-0.1 +0.10.38 -0.1 +0.10.97 -0.1 +0.11.3 -0.1 0.55 0.4 Unit: mm 0.1+0.05 -0.01 1.Base 2.Emitter 3.collector www.kexin.com.cn 1 SMD Type Electrical Characteristics Ta = 25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage * Emitter-base breakdown voltage Collector cutoff current Emitter cut-off current Collector-emitter saturation voltage * Base-emitter saturation voltage * Base-emitter voltage * DC current gain * Current-gain-bandwidth product Output capacitance Turn-on time Turn-off time * Pulse test: tp 300ìs; d 0.02. Marking Marking 722 FMMT722 Symbol Testconditons V(BR)CBO IC=-100ìA V(BR)CEO IC=-10mA V(BR)EBO IE=-100ìA ICBO VCB=-60V IEBO VEB=-4V IC=-0.1A, IB=-10mA VCE(sat) IC=-0.5A, IB=-20mA IC=-1A, IB=-100mA IC=-1.5A, IB=-200mA VBE(sat) IC=-1.5A,IB=-200mA VBE(ON) IC=-1.5A,VCE=-5V IC=-10mA, VCE=-5V hFE IC=-0.1A, VCE=-5V IC=-1A, VCE=-5V IC=-1.5A, VCE=-5V fT IC=-50mA,VCE=-10V,f=100MHz Cobo VCB=-10V,f=1MHz t(on) VCC=-50V, IC=-0.5A t(off) IB1=-IB2=-50mA TransistIoCrs Min Typ Max Unit -70 -150 V -70 -125 V -5 -8.8 V -100 nA -100 nA -35 -135 -140 -175 -50 -200 -220 -260 mV 0.94 -1.05 V -0.78 -1.0 300 470 300 450 175 275 40 60 V 150 200 MHz 14 20 pF 40 ns 700 ns 2 www.kexin.com.cn .


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