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SMD Type
TransistIoCrs
Switching Transistor FMMT722
Features
625mW power dissipation. IC CONT 2.5A. IC up to 10A peak pulse current. Excellent hfe characteristics up to 10A (pulsed). Extremely low saturation voltage e.g. 10mV typ.. Exhibits extremely low equivalent on-resistance; RCE(sat) .
+0.12.4 -0.1
SOT-23
2.9+0.1 -0.1
0.4+0.1 -0.1
3
12 0.95+0.1
-0.1
1.9+0.1 -0.1
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Peak collector current Collector current Base current Power dissipation Operating and storage temperature range
Symbol VCBO VCEO VEBO ICM IC IB Ptot Tj,Tstg
Rating -70 -70 -5 -3 -1.5 -500 625
-55 to +150
Unit V V V A A mA
mW
0-0.1 +0.10.38
-0.1
+0.10.97 -0.1
+0.11.3 -0.1
0.55 0.4
Unit: mm
0.1+0.05 -0.01
1.Base 2.Emitter 3.collector
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SMD Type
Electrical Characteristics Ta = 25
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage * Emitter-base breakdown voltage Collector cutoff current Emitter cut-off current
Collector-emitter saturation voltage *
Base-emitter saturation voltage * Base-emitter voltage *
DC current gain *
Current-gain-bandwidth product Output capacitance Turn-on time Turn-off time
* Pulse test: tp 300ìs; d 0.02.
Marking
Marking
722
FMMT722
Symbol
Testconditons
V(BR)CBO IC=-100ìA
V(BR)CEO IC=-10mA
V(BR)EBO IE=-100ìA
ICBO VCB=-60V
IEBO VEB=-4V
IC=-0.1A, IB=-10mA
VCE(sat)
IC=-0.5A, IB=-20mA IC=-1A, IB=-100mA
IC=-1.5A, IB=-200mA
VBE(sat) IC=-1.5A,IB=-200mA
VBE(ON) IC=-1.5A,VCE=-5V
IC=-10mA, VCE=-5V
hFE
IC=-0.1A, VCE=-5V IC=-1A, VCE=-5V
IC=-1.5A, VCE=-5V
fT IC=-50mA,VCE=-10V,f=100MHz
Cobo VCB=-10V,f=1MHz
t(on) VCC=-50V, IC=-0.5A
t(off) IB1=-IB2=-50mA
TransistIoCrs
Min Typ Max Unit
-70 -150
V
-70 -125
V
-5 -8.8
V
-100 nA
-100 nA
-35 -135 -140 -175
-50 -200 -220 -260
mV
0.94 -1.05 V
-0.78 -1.0
300 470 300 450 175 275
40 60
V
150 200
MHz
14 20 pF
40 ns
700 ns
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