FZT653

SMD Type Transistors 0.1max +0.050.90 -0.05 +0.151.65 -0.15 NPN Silicon Planar High Performance Transistor FZT653 Features Low saturation voltage Absolute Maximum Ratings Ta = 25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb=25 Operating and Storage Temperature Range SOT-223 6.50+0.2 -0.2 Unit: mm 3.50+0.2 -0.2 3.00+0.1 -0.1 4 0.90+0.2 -0.2 7.00+0.3 -0.3 123 2.9 4.6 0.70+0.1 -0.1 1 Base 2 Collector 3 Emitter 4 Collector Symbol VCBO VCEO VEBO ICM IC Ptot Tj:Tstg Rating 120 100 5 6 2 2 -55 to +150 Unit V V V A A W www.kexin.com.cn 1 SMD Type Transistors FZT653 Electrical Characteristics Ta = 25 Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio Transition Frequency Output Capacitance Switching Times Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) VBE(sat) VBE(on) hFE fT Cobo ton toff Testconditons IC=100ìA IC=10mA* IE=100ìA VCB=100V VCB=100V,Tamb=100 VEB=4V IC=1A, IB=100mA* IC=2A, IB=200mA* IC=1A, IB=100mA* IC=1A, VCE =2V* IC=50mA, VCE =2V* IC=500mA, VCE =2V* IC=1A, VCE =2V* IC=2A, VCE =2V* IC=100mA, VCE =5V,f=100MHz VCB=10V, f=1MHz IC=500mA, VCC =10V IB1=IB2=50mA * Measured under pulsed conditions. Puls...