FZT688B

SMD Type Transistors NPN Silicon Planar Medium Power High Gain Transistor FZT688B 0.1max +0.050.90 -0.05 +0.151.65 -0.15 Features Extremely low equivalent on resistance; RCE(sat)83mÙ at 3A. Gain of 400 at IC=3 Amps and very low saturation voltage. SOT-223 6.50+0.2 -0.2 3.00+0.1 -0.1 4 Unit: mm 3.50+0.2 -0.2 0.90+0.2 -0.2 7.00+0.3 -0.3 Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Peak pulse current Continuous collector current Power dissipation Operating and storage temperature range 123 2.9 4.6 0.70+0.1 -0.1 1 base 2 collector 3 emitter Symbol VCBO VCEO VEBO IC ICM Ptot Tj,Tstg Rating 12 12 5 4 10 2 -55 to +150 Unit V V V A A W www.kexin.com.cn 1 SMD Type Transistors Electrical Characteristics Ta = 25 Parameter Breakdown Voltages Breakdown Voltages Breakdown Voltages Collector Cut-Off Current Emitter Cut-Off Current Collector-emitter saturation voltage * Base-emitter saturation voltage * Base-Emitter Turn-On Voltage * Static Forward Current Transfer Ratio* Transitional frequency Input capacitance Output capacitance Turn-on time Turn-off time * Pulse test: tp = 300 ìs; d 0.02. FZT688B Symbol Testconditons V(BR)CBO IC=100ìA V(BR)CEO IC=10mA V(BR)EBO IE=100ìA ICBO VCB=10V IEBO VEB=4V IC=0.1A, IB=1mA IC=0.1A, IB=0.5mA VCE(sat) IC=1A, IB=50mA IC=3A, IB=20mA IC=4A, IB=50mA VBE(sat) IC=3A, IB=20mA VBE(on) IC=3A, VCE=2V IC=0.1A, VCE=2V hFE IC=3A, VCE=2V IC=10A, VCE=2V fT IC=50mA, VCE=5V...