FZT692B

SMD Type Transistors NPN Silcon Planar Medium Power High Gain Transistor FZT692B 0.1max +0.050.90 -0.05 +0.151.65 -0.15 Features High gain + very low saturation voltage. SOT-223 6.50+0.2 -0.2 3.00+0.1 -0.1 4 Unit: mm 3.50+0.2 -0.2 0.90+0.2 -0.2 7.00+0.3 -0.3 Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Peak pulse current Continuous collector current Power dissipation Operating and storage temperature range 123 2.9 4.6 0.70+0.1 -0.1 1 base 2 collector 3 emitter Symbol VCBO VCEO VEBO IC ICM Ptot Tj,Tstg Rating 70 70 5 2 5 2 -55 to +150 Unit V V V A A W www.kexin.com.cn 1 SMD Type FZT692B Electrical Characteristics Ta = 25 Parameter BreakdownVoltages BreakdownVoltages BreakdownVoltages Cut-Off Currents Cut-Off Currents Saturation Voltages* Saturation Voltages Base-emitter ON voltage * Static Forward Current Transfer Ratio * Transitional frequency Input capacitance Output capacitance Turn-on time Turn-off time * Pulse test: tp = 300 ìs; d 0.02. Symbol Testconditons V(BR)CBO IC=100ìA V(BR)CEO IC=10mA * V(BR)EBO IE=100ìA ICBO VCB=55V IEBO VEB=4V IC=0.1A, IB=0.5mA VCE(sat) IC=1A, IB=10mA IC=2A, IB=200mA VBE(sat) IC=1A, IB=10mA VBE(on) IC=1A, VCE=2V IC=100mA, VCE=2V hFE IC=500mA, VCE=2V IC=1A, VCE=2V fT IC=50mA, VCE=5V f=50MHz Cibo Cobo VEB=0.5V, f=1MHz VCB=10V, f=1MHz t(on) IC=500mA, VCC=10V t(off) IB1=IB2=50mA Marking Marking FZT692B Transistors Min Typ Max Unit 70 V 70 V 5V...