FZT749

SMD Type Transistors NPN Silicon Planar Medium Power Transistor FZT749 0.1max +0.050.90 -0.05 +0.151.65 -0.15 Features 25 Volt VCEO. 3 Amp continuous current. Low saturation voltage. Excellent hFE specified up to 6A . SOT-223 6.50+0.2 -0.2 3.00+0.1 -0.1 4 Unit: mm 3.50+0.2 -0.2 0.90+0.2 -0.2 7.00+0.3 -0.3 Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Continuous collector current Peak pulse current Power dissipation Operating and storage temperature range 123 2.9 4.6 0.70+0.1 -0.1 1 base 2 collector 3 emitter Symbol VCBO VCEO VEBO ICM IC Ptot Tj,Tstg Rating -35 -25 -5 -8 -3 2 -55 to +150 Unit V V V A A W www.kexin.com.cn 1 SMD Type Electrical Characteristics Ta = 25 Parameter Breakdown Voltages Breakdown Voltages Breakdown Voltages Collector Cut-Off Currents Collector Cut-Off Currents Saturation Voltages * Saturation Voltages * Base-emitter ON voltage * Static Forward Current Transfer Ratio Transitional frequency Output capacitance Turn-on time Turn-off time * Pulse test: tp = 300 ìs; d 0.02. Marking Marking FZT749 FZT749 Transistors Symbol Testconditons V(BR)CBO IC=-100ìA V(BR)CEO IC=-10mA V(BR)EBO IE=-100ìA ICBO VCB=-30V VCB=-30V,Ta = 100 IEBO VEB=4V VCE(sat) IC=-1A, IB=-100mA IC=-3A, IB=-300mA VBE(sat) IC=-1A, IB=-100mA VBE(on) IC=-1A, VCE=-2V IC=-50mA, VCE=-2V* IC=-1A, VCE=-2V* hFE IC=-2A, VCE=-2V* IC=-6A, VCE=-2V* fT IC=-100mA, VCE=-5V, f=100MHz Cobo VCB=-10V, f=1MHz...