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SBR2U10LP Dataheets PDF



Part Number SBR2U10LP
Manufacturers Diodes
Logo Diodes
Description SURFACE MOUNT SUPER BARRIER RECTIFIER
Datasheet SBR2U10LP DatasheetSBR2U10LP Datasheet (PDF)

AADDVVAANNCCEEIINNFFOORRMMAATTIIOONN SBR2U10LP 2A SBR® SURFACE MOUNT SUPER BARRIER RECTIFIER Product Summary(@TA = +25°C) VRRM (V) 10 IO (A) 2 VF(MAX)(V) 0.46 IR(MAX) (mA) 2 Description and Applications Packaged in the compact X1-DFN1411-3 package, the SBR2U10LP provides ultra-low forward voltage drop (VF) and provides excellent low reverse leakage stability at high temperatures. It is ideal for use as a bypass, freewheeling or polarity protection diode in applications such as:  Solar Pa.

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AADDVVAANNCCEEIINNFFOORRMMAATTIIOONN SBR2U10LP 2A SBR® SURFACE MOUNT SUPER BARRIER RECTIFIER Product Summary(@TA = +25°C) VRRM (V) 10 IO (A) 2 VF(MAX)(V) 0.46 IR(MAX) (mA) 2 Description and Applications Packaged in the compact X1-DFN1411-3 package, the SBR2U10LP provides ultra-low forward voltage drop (VF) and provides excellent low reverse leakage stability at high temperatures. It is ideal for use as a bypass, freewheeling or polarity protection diode in applications such as:  Solar Panels  Portable Electronics X1-DFN1411-3 Features and Benefits  Small Form factor Package with a PCB Footprint of just 1.54mm2 - 40% Smaller Than SOT666  Lower Reverse Leakage Ensuring Greater Stability at Higher Temperatures  Low Forward Voltage (VF) Minimises Conduction Losses and Improving Efficiency  Totally Lead-Free; RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3) Mechanical Data  Case: X1-DFN1411-3  Case Material: Molded Plastic, “Green” Molding Compound.  UL Flammability Classification Rating 94V-0  Moisture Sensitivity: Level 1 per J-STD-020  Terminal Connections: Cathode Bar (See Note 5)  Terminals: Finish – NiPdAu over Copper Lead Frame.  Solderable per MIL-STD-202, Method 208 e4  Weight: 2.35mg (approximate) 2 1 3 Top View Bottom View Top View Internal Schematic Ordering Information (Note 4) Notes: Part Number SBR2U10LP-7 Case X1-DFN1411-3 Packaging 3000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. 5. It is recommended that Pins 2 and 3 be electrically connected at the printed circuit board. Marking Information M D5 Y D5 = Product Type Marking Code Y = Year (ex: B = 2014) M = Month (ex: 9 = September) Date Code Key Year Code Month Code 2014 B Jan 1 2015 C Feb Mar 23 2016 D Apr 4 SBR is a registered trademark of Diodes Incorporated. SBR2U10LP Document number:DS36572 Rev. 3 - 2 2017 E May 5 2018 F Jun Jul 67 2019 G Aug 8 1 of 4 www.diodes.com 2020 H Sep 9 2021 I Oct Nov ON 2022 J Dec D July 2014 © Diodes Incorporated Maximum Ratings (@TA = +25°C, unless otherwise specified.) Single phase, half wave, 60Hz, resistive or inductive load. For capacitance load, derate current by 20%. Characteristic Symbol Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Output Current (See Figure 1) Non-Repetitive Peak Forward Surge Current, 8.3ms Single Half Sine-Wave Superimposed on Rated Load VRRM VRWM VRM IO IFSM SBR2U10LP Value 10 2 21 Unit V A A AADDVVAANNCCEEIINNFFOORRMMAATTIIOONN Thermal Characteristics Characteristic Thermal Resistance Junction to Case (Note 6) Thermal Resistance Junction to Ambient (Note 6) Operating and Storage Temperature Range Symbol RθJC RθJA TJ, TSTG Value 55 210 -65 to +150 Unit °C/W °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Forward Voltage Drop (Note 7) Leakage Current (Note 8) Symbol VF IR Min — — — Typ 0.40 0.5 25 Max 0.46 2 100 Unit V mA mA Reverse Recovery Time trr — 43 60 ns Junction Capacitance Cj — 102 — pF Notes: 6. Device mounted on FR-4 substrate, 1"*1", 2oz, single-sided, PC boards with 0.1"*0.15" copper pad. 7. It is recommended to electrically connect both Anode pins together during operation to achieve optimal performance. 8. Short duration pulse test used to minimize self-heating effect. Test Condition IF = 2.0A, TJ = +25°C VR = 10V, TJ = +25°C VR = 10V, TJ = +125°C IF =10mA, Irr = 0.1*IRM, RL= 100Ω VR = 5V, f = 1.0MHz PD, POWER DISSIPATION (W) 1.8 1.6 Note 6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 00 1 2 3 4 5 IF(AV) AVERAGE RECTIFIED FORWARD CURRENT (A) Figure 1 Forward Power Dissipation IF, INSTANTANEOUS FORWARD CURRENT (A) 1 TA = 150°C TA = 125°C 0.1 TA = 85°C 0.01 TA = 25°C TA = -65°C 0.001 0 100 200 300 400 VF, INSTANTANEOUS FORWARD VOLTAGE (mV) Figure 2 Typical Forward Characteristics SBR is a registered trademark of Diodes Incorporated. SBR2U10LP Document number:DS36572 Rev. 3 - 2 2 of 4 www.diodes.com July 2014 © Diodes Incorporated CT, JUNCTION CAPACITANCE (pF) IR, INSTANTANEOUS REVERSE CURRENT (µA) 100000 10000 1000 100 10 TA = 150°C TA = 85°C TA = 125°C TA = 25°C TA = -65°C 1000 100 SBR2U10LP f = 1MHz AADDVVAANNCCEEIINNFFOORRMMAATTIIOONN 1 TA, DERATED AMBIENT TEMPERATURE (°C) IO, AVERAGE RECTIFIED OUTPUT CURRENT (A) 0.11 2 3 4 5 6 7 8 9 10 VR, INSTANTANEOUS REVERSE VOLTAGE (V) Figure 3 Typical Reverse Characteristics 3.00 2.50 2.00 1.50 1.00 No Heatsink With Heatsink 10.


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