Document
SS12L thru SS115L
Schottky Barrier Rectifiers
PRODUCT SUMMARY
1.0 Amp. Surface Mount
FEATURES
For surface mounted application Low-Profile Package Ideal for automated pick & place Low power loss, high efficiency High current capability, low VF High surge current capability Plastic material used carriers Underwriters Laboratory Classification 94V-0 Epitaxial construction High temperature soldering: 260 oC / 10 seconds at terminals
MECHANICAL DATA
Cases: Sub SMA plastic case Terminal : Pure tin plated, lead free. Polarity: Color band denotes cathode end Packaging: 12mm tape per EIA STD RS-481 Weight approx. 15mg
Sub SMA
Dimensions in inches and (millimeters)
Pb-free; RoHS-compliant
08/22/2007 Rev.1.00
www.SiliconStandard.com
1
SS12L thru SS115L
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, de-rate current by 20%
Type Number
Symbol SS SS SS SS SS SS SS SS Units 12L 13L 14L 15L 16L 19L 110L 115L
Maximum Recurrent Peak Reverse Voltage VRRM 20 30 40 50 60 90 100 150 V
Maximum RMS Voltage
VRMS 14 21 28 35 42 63 70 105 V
Maximum DC Blocking Voltage
VDC 20 30 40 50 60 90 100 150 V
Marking Code (Note 2)
12LYM 13LYM 14LYM 15LYM 16LYM 19LYM 10LYM A5LYM
Maximum Average Forward Rectified Current
I(AV)
1.0
A
Peak Forward Surge Current, 8.3 ms
Single Half Sine-wave Superimposed on IFSM 30 A Rated Load (JEDEC method )
Maximum Instantaneous Forward Voltage
(Note 1)
@ 0.5A @ 1.0A
VF 0.385 0.43 0.51 0.45 0.50 0.55
0.58 0.70
0.65 0.75 V
0.80
0.90
Maximum DC Reverse Current @ TA =25 oC at Rated DC Blocking Voltage @ TA=100 oC
IR 8.0
0.4 6.0
0.05 mA 0.5 mA
Maximum Thermal Resistance (Note 3)
Operating Temperature Range Storage Temperature Range
RθJA RθJL
TJ
TSTG
100 45
-55 to +150 -55 to + 150
oC/W oC oC
Notes: 1. Pulse Test with PW=300 usec, 1% Duty Cycle.
2. 12LYM: 1-1A, 2-20V, L-Low Profile, Y-Year Code, M-Month Code.
3. Measured on P.C.Board with 0.2” x 0.2” (5.0mm x 5.0mm) Copper Pad Areas.
08/22/2007 Rev.1.00
www.SiliconStandard.com
2
SS12L thru SS115L
RATINGS AND CHARACTERISTIC CURVES
AVERAGE FORWARD CURRENT. (A)
INSTANTANEOUS FORWARD CURRENT. (A)
FIG.1- MAXIMUM FORWARD CURRENT DERATING CURVE
1.2
1.0
0.8
0.6
0.4
0.2
0
0
20 40
60
80
100 120
140 160
LEAD TEMPERATURE. (oC)
FIG.3- TYPICAL FORWARD CHARACTERISTICS
100
50 SS15L-SS16L
20 SS13L-SS14L
10
5 SS12L
2 SS115L 1
0.5
0.2
0.1 SS19L-SS110L 0.05
0.02
0.01 0.2 0.4 0.6 0.8
1.0 1.2
1.4 1.6
FORWARD VOLTAGE. (V)
1.8
FIG.5- TYPICAL JUNCTION CAPACITANCE
100
50 Tj=25OC f=1.0MHz Vsig=50mVp-p
20
10 5
INSTANTANEOUS REVERSE CURRENT. ( A)
PEAK FORWARD SURGE CURRENT. (A)
FIG.2- MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT
100
50
20 10
5
2 8.3ms Single Half Sine Wave Tj=Tj max
1 12
5 10 20
NUMBER OF CYCLES AT 60Hz
50
FIG.4- TYPICAL REVERSE CHARACTERISTICS
10,000
100
1,000 100
TJ
=
O
100
.