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VS-4CSH02HM3 Dataheets PDF



Part Number VS-4CSH02HM3
Manufacturers Vishay
Logo Vishay
Description Hyperfast Rectifier
Datasheet VS-4CSH02HM3 DatasheetVS-4CSH02HM3 Datasheet (PDF)

www.vishay.com VS-4CSH02HM3 Vishay Semiconductors Hyperfast Rectifier, 2 x 2 A FRED Pt® K 1 2 TO-277A (SMPC) K Cathode Anode 1 Anode 2 FEATURES • Hyperfast recovery time, reduced Qrr, and soft recovery • 175 °C maximum operating junction temperature • Specified for output and snubber operation • Low forward voltage drop • Low leakage current • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified, meets JESD 201 class 2 whisker test • Material categorization: for.

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www.vishay.com VS-4CSH02HM3 Vishay Semiconductors Hyperfast Rectifier, 2 x 2 A FRED Pt® K 1 2 TO-277A (SMPC) K Cathode Anode 1 Anode 2 FEATURES • Hyperfast recovery time, reduced Qrr, and soft recovery • 175 °C maximum operating junction temperature • Specified for output and snubber operation • Low forward voltage drop • Low leakage current • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified, meets JESD 201 class 2 whisker test • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PRODUCT SUMMARY Package IF(AV) VR VF at IF trr (typ.) TJ max. Diode variation TO-277A (SMPC) 2x2A 200 V 0.95 V 24 ns 175 °C Dual die DESCRIPTION / APPLICATIONS State of the art hyperfast recovery rectifiers specifically designed with optimized performance of forward voltage drop and hyperfast recovery time. The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness, and reliability characteristics. These devices are intended for use in snubber, boost, lighting, piezo-injection, as high frequency rectifiers, and freewheeling diodes. The extremely optimized stored charge and low recovery current minimize the switching losses and reduce power dissipation in the switching element. ABSOLUTE MAXIMUM RATINGS PARAMETER Peak repetitive reverse voltage Average rectified forward current per device per diode Non-repetitive peak surge current per device per diode Operating junction and storage temperatures SYMBOL VRRM IF(AV) IFSM TJ, TStg TEST CONDITIONS TSp = 165 °C TJ = 25 °C VALUES 200 4 2 90 50 -65 to +175 UNITS V A °C ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN. Breakdown voltage, blocking voltage VBR, VR IR = 100 μA 200 Forward voltage, per diode IF = 2 A VF IF = 2 A, TJ = 125 °C - Reverse leakage current, per diode VR = VR rated IR TJ = 125 °C, VR = VR rated - Junction capacitance CT VR = 200 V - TYP. - 0.88 0.75 1 8 MAX. - 0.95 0.82 2 8 - UNITS V μA pF Revision: 25-Nov-14 1 Document Number: 94973 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com VS-4CSH02HM3 Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. Reverse recovery time Peak recovery current Reverse recovery charge trr IRRM Qrr IF = 1.0 A, dIF/dt = 50 A/μs, VR = 30 V IF = 0.5 A, IR = 1 A, Irr = 0.25 A TJ = 25 °C TJ = 125 °C TJ = 25 °C TJ = 125 °C TJ = 25 °C IF = 2 A dIF/dt = 200 A/μs VR = 160 V TJ = 125 °C - 24 16 22 2 3 16 30 MAX. 25 - UNITS ns A nC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS Maximum junction and storage temperature range Thermal resistance, junction to solder pad, per diode TJ, TStg RthJ-Sp Approximate weight Marking device Case style TO-277A (SMPC) MIN. -65 - TYP. - MAX. 175 4.5 5.5 0.1 0.0035 JCH2 UNITS °C °C/W g oz. 100 10 TJ = 175 °C 1 0.1 0.4 TJ = 150 °C TJ = 125 °C TJ = 25 °C 0.8 1.2 1.6 2.0 VF - Forward Voltage Drop (V) 2.4 Fig. 1 - Typical Forward Voltage Drop Characteristics 100 10 175 °C 1 150 °C 125 °C 0.1 0.01 0.001 25 °C 0.0001 0 50 100 150 200 VR - Reverse Voltage (V) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage IF - Instantaneous Forward Current (A) IR - Reverse Current (μA) Revision: 25-Nov-14 2 Document Number: 94973 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 CT - Junction Capacitance (pF) www.vishay.com 100 10 1 0 50 100 150 200 VR - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage Average Power Loss (W) VS-4CSH02HM3 Vishay Semiconductors 3 RMS limit 2.5 2 1.5 D = 0.02 D = 0.05 D = 0.1 1 D = 0.2 D = 0.5 0.5 DC 0 0 0.5 1 1.5 2 2.5 3 3.5 IF(AV) - Average Forward Current (A) Fig. 5 - Forward Power Loss Characteristics Allowable Case Temperature (°C) 180 175 170 DC 165 Square wave (D = 0.50) 80 % rated VR applied 160 See note (1) 155 0 0.5 1 1.5 2 2.5 IF(AV) - Average Forward Current (A) Fig. 4 - Maximum Allowable Case Temperature vs. Average Forward Current trr (ns) 35 30 25 20 25 °C 15 10 125 °C 5 0 100 1000 dIF/dt (A/μs) Fig. 6 - Typical Reverse Recovery Time vs. dIF/dt 45 40 35 125 °C Qrr (nC) 30 25 25 °C 20 15 10 100 dIF/dt (A/μs) 1000 Fig. 7 - Typical Stored Charge vs. dIF/dt Note (1) Formula used: TC = TJ - (Pd + PdREV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV.


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