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VS-4CSH02HM3
Vishay Semiconductors
Hyperfast Rectifier, 2 x 2 A FRED Pt®
K
1 2 TO-277A (SMPC)
K Cathode
Anode 1 Anode 2
FEATURES • Hyperfast recovery time, reduced Qrr, and soft
recovery
• 175 °C maximum operating junction temperature
• Specified for output and snubber operation
• Low forward voltage drop
• Low leakage current
• Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
• AEC-Q101 qualified, meets JESD 201 class 2 whisker test
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
PRODUCT SUMMARY
Package IF(AV) VR
VF at IF trr (typ.) TJ max. Diode variation
TO-277A (SMPC) 2x2A 200 V 0.95 V 24 ns 175 °C Dual die
DESCRIPTION / APPLICATIONS
State of the art hyperfast recovery rectifiers specifically designed with optimized performance of forward voltage drop and hyperfast recovery time.
The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness, and reliability characteristics.
These devices are intended for use in snubber, boost, lighting, piezo-injection, as high frequency rectifiers, and freewheeling diodes.
The extremely optimized stored charge and low recovery current minimize the switching losses and reduce power dissipation in the switching element.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Peak repetitive reverse voltage
Average rectified forward current
per device per diode
Non-repetitive peak surge current
per device per diode
Operating junction and storage temperatures
SYMBOL VRRM IF(AV)
IFSM TJ, TStg
TEST CONDITIONS TSp = 165 °C TJ = 25 °C
VALUES 200 4 2 90 50
-65 to +175
UNITS V
A
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
Breakdown voltage, blocking voltage
VBR, VR
IR = 100 μA
200
Forward voltage, per diode
IF = 2 A VF
IF = 2 A, TJ = 125 °C
-
Reverse leakage current, per diode
VR = VR rated IR
TJ = 125 °C, VR = VR rated
-
Junction capacitance
CT VR = 200 V
-
TYP.
-
0.88 0.75
1 8
MAX.
-
0.95 0.82
2 8 -
UNITS V
μA pF
Revision: 25-Nov-14
1 Document Number: 94973
For technical questions within your region:
[email protected],
[email protected],
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
VS-4CSH02HM3
Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
Reverse recovery time
Peak recovery current Reverse recovery charge
trr
IRRM Qrr
IF = 1.0 A, dIF/dt = 50 A/μs, VR = 30 V
IF = 0.5 A, IR = 1 A, Irr = 0.25 A
TJ = 25 °C
TJ = 125 °C TJ = 25 °C TJ = 125 °C TJ = 25 °C
IF = 2 A dIF/dt = 200 A/μs
VR = 160 V
TJ = 125 °C
-
24 16 22 2 3 16 30
MAX. 25 -
UNITS ns
A nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction and storage temperature range
Thermal resistance, junction to solder pad, per diode
TJ, TStg RthJ-Sp
Approximate weight
Marking device
Case style TO-277A (SMPC)
MIN. -65
-
TYP. -
MAX. 175
4.5 5.5
0.1 0.0035
JCH2
UNITS °C
°C/W g oz.
100 10 TJ = 175 °C
1
0.1 0.4
TJ = 150 °C TJ = 125 °C TJ = 25 °C
0.8 1.2 1.6 2.0
VF - Forward Voltage Drop (V)
2.4
Fig. 1 - Typical Forward Voltage Drop Characteristics
100
10 175 °C
1 150 °C
125 °C 0.1
0.01 0.001
25 °C
0.0001 0
50 100 150 200
VR - Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
IF - Instantaneous Forward Current (A) IR - Reverse Current (μA)
Revision: 25-Nov-14
2 Document Number: 94973
For technical questions within your region:
[email protected],
[email protected],
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
CT - Junction Capacitance (pF)
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100
10
1 0 50 100 150 200
VR - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Average Power Loss (W)
VS-4CSH02HM3
Vishay Semiconductors
3 RMS limit
2.5
2
1.5 D = 0.02 D = 0.05 D = 0.1
1 D = 0.2 D = 0.5
0.5 DC
0 0 0.5 1 1.5 2 2.5 3 3.5
IF(AV) - Average Forward Current (A) Fig. 5 - Forward Power Loss Characteristics
Allowable Case Temperature (°C)
180
175
170 DC
165 Square wave (D = 0.50) 80 % rated VR applied
160
See note (1) 155
0 0.5 1 1.5 2 2.5
IF(AV) - Average Forward Current (A) Fig. 4 - Maximum Allowable Case Temperature
vs. Average Forward Current
trr (ns)
35
30
25 20 25 °C
15 10 125 °C
5
0 100
1000
dIF/dt (A/μs)
Fig. 6 - Typical Reverse Recovery Time vs. dIF/dt
45
40
35 125 °C
Qrr (nC)
30
25 25 °C
20
15
10 100
dIF/dt (A/μs)
1000
Fig. 7 - Typical Stored Charge vs. dIF/dt
Note
(1) Formula used: TC = TJ - (Pd + PdREV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV.