Document
Advanced Power Electronics Corp.
AP2602MT
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement ▼ SO-8 Compatible with Heatsink
D
▼ Ultra Low On-resistance
▼ RoHS Compliant & Halogen-Free
G
Description
S
AP2602 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The PMPAK ® 5x6 package is special for DC-DC converters application and the foot print is compatible with SO-8 with backside heat sink and lower profile.
BVDSS
RDS(ON) ID4
25V 0.99mΩ
260A
D D D D
S S S G
PMPAK® 5x6
Absolute
Symbol
Maximum
RatingPsa@ramTejt=er25o.C(unless
otherwise specified)
Rating
Units
VDS VGS ID@TC=25℃ ID@TA=25℃ ID@TA=70℃ IDM PD@TC=25℃ PD@TA=25℃ EAS TSTG TJ
Drain-Source Voltage
Gate-Source Voltage Drain Current (Chip), VGS @ 10V4 Drain Current, VGS @ 10V3 Drain Current, VGS @ 10V3 Pulsed Drain Current1
Total Power Dissipation Total Power Dissipation3 Single Pulse Avalanche Energy5
Storage Temperature Range
Operating Junction Temperature Range
25 +20 260 57.3 45.8 650 104
5 45 -55 to 150 -55 to 150
V V A A A A W W mJ ℃ ℃
Thermal Data
Symbol
Parameter
Rthj-c Rthj-a
Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient3
Data and specifications subject to change without notice
Value 1.2 25
Unit ℃/W ℃/W
1 201501202
AP2602MT
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS RDS(ON)
VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg
Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2
Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance
VGS=0V, ID=1mA VGS=10V, ID=20A VGS=4.5V, ID=20A VDS=VGS, ID=250uA VDS=10V, ID=20A VDS=20V, VGS=0V VGS=+20V, VDS=0V ID=20A VDS=15V VGS=4.5V VDS=15V ID=1A RG=3.3Ω VGS=10V VGS=0V
.VDS=15V
f=1.0MHz
f=1.0MHz
25 - - V - 0.85 0.99 mΩ
- 1.15 1.3 mΩ
0.9 - 2.2 V
- 135 -
S
- - 10 uA
- - +100 nA
- 78 125 nC
- 13 - nC
- 38 - nC
- 16 - ns
- 18 - ns
- 120 - ns
- 95 - ns
- 7300 11680 pF
- 1400 - pF
- 790 - pF
- 1.2 2.4 Ω
Source-Drain Diode
Symbol
Parameter
IS Source Current ( Body Diode ) VSD Forward On Voltage2
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Test Conditions
IS=20A, VGS=0V IS=20A, VGS=0V, dI/dt=100A/µs
Min. Typ. Max. Units - - 60 A - - 1.2 V - 60 - ns - 70 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test 3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec; 60oC/W at steady state. 4.Package limitation current is 60A . 5.Starting Tj=25oC , VDD=25V , L=0.1mH , RG=25Ω
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN.
2
AP2602MT
ID , Drain Current (A)
RDS(ON) (mΩ)
240
T C =25 o C
200
10V 7.0V
160
6.0V 5.0V 120 4.0V V G = 3.0V
80
40
0 0
0.4 0.8 1.2 1.6
2
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
ID , Drain Current (A)
120
T C = 150 o C
100
10V 7.0V 80 6.0V 5.0V 4.0V
60
V G = 3.0V
40
20
0 001122
V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1.3
I D = 20 A T C =25 o C
1.2
1.1
.
1
0.9
0.8 2 4 6 8 10
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
100
10
T j =150 o C
1
T j =25 o C
Normalized VGS(th)
Normalized RDS(ON)
1.8
I D =20A V G =10V
1.6
1.4
1.2
1.0
0.8
0.6 -100 -50 0 50 100
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance v.s. Junction Temperature
2.0
I D =1mA
1.6
150
1.2
0.8
0.4
0.1 0
0.2 0.4 0.6 0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of Reverse Diode
1.2
0.0 -100
-50 0 50 100
T j , Junction Temperature ( o C)
150
Fig 6. Gate Threshold Voltage v.s. Junction Temperature
3
IS(A)
VGS , Gate to Source Voltage (V)
AP2602MT
8
I D = 20 A V DS =15V
6
4
2
0 0 20 40 60 80 100 120
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
C (pF)
f=1.0MHz
10000
8000
C iss
6000
4000
2000
C oss C rss
0 1 5 9 13 17 21 25 29
V DS , Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
ID (A)
1000
Operation in this area limited by
RDS(ON)
.