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AP2602MT Dataheets PDF



Part Number AP2602MT
Manufacturers Advanced Power Electronics
Logo Advanced Power Electronics
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet AP2602MT DatasheetAP2602MT Datasheet (PDF)

Advanced Power Electronics Corp. AP2602MT Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ SO-8 Compatible with Heatsink D ▼ Ultra Low On-resistance ▼ RoHS Compliant & Halogen-Free G Description S AP2602 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power .

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Advanced Power Electronics Corp. AP2602MT Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ SO-8 Compatible with Heatsink D ▼ Ultra Low On-resistance ▼ RoHS Compliant & Halogen-Free G Description S AP2602 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The PMPAK ® 5x6 package is special for DC-DC converters application and the foot print is compatible with SO-8 with backside heat sink and lower profile. BVDSS RDS(ON) ID4 25V 0.99mΩ 260A D D D D S S S G PMPAK® 5x6 Absolute Symbol Maximum RatingPsa@ramTejt=er25o.C(unless otherwise specified) Rating Units VDS VGS ID@TC=25℃ ID@TA=25℃ ID@TA=70℃ IDM PD@TC=25℃ PD@TA=25℃ EAS TSTG TJ Drain-Source Voltage Gate-Source Voltage Drain Current (Chip), VGS @ 10V4 Drain Current, VGS @ 10V3 Drain Current, VGS @ 10V3 Pulsed Drain Current1 Total Power Dissipation Total Power Dissipation3 Single Pulse Avalanche Energy5 Storage Temperature Range Operating Junction Temperature Range 25 +20 260 57.3 45.8 650 104 5 45 -55 to 150 -55 to 150 V V A A A A W W mJ ℃ ℃ Thermal Data Symbol Parameter Rthj-c Rthj-a Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient3 Data and specifications subject to change without notice Value 1.2 25 Unit ℃/W ℃/W 1 201501202 AP2602MT Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VGS=0V, ID=1mA VGS=10V, ID=20A VGS=4.5V, ID=20A VDS=VGS, ID=250uA VDS=10V, ID=20A VDS=20V, VGS=0V VGS=+20V, VDS=0V ID=20A VDS=15V VGS=4.5V VDS=15V ID=1A RG=3.3Ω VGS=10V VGS=0V .VDS=15V f=1.0MHz f=1.0MHz 25 - - V - 0.85 0.99 mΩ - 1.15 1.3 mΩ 0.9 - 2.2 V - 135 - S - - 10 uA - - +100 nA - 78 125 nC - 13 - nC - 38 - nC - 16 - ns - 18 - ns - 120 - ns - 95 - ns - 7300 11680 pF - 1400 - pF - 790 - pF - 1.2 2.4 Ω Source-Drain Diode Symbol Parameter IS Source Current ( Body Diode ) VSD Forward On Voltage2 trr Reverse Recovery Time Qrr Reverse Recovery Charge Test Conditions IS=20A, VGS=0V IS=20A, VGS=0V, dI/dt=100A/µs Min. Typ. Max. Units - - 60 A - - 1.2 V - 60 - ns - 70 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec; 60oC/W at steady state. 4.Package limitation current is 60A . 5.Starting Tj=25oC , VDD=25V , L=0.1mH , RG=25Ω THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP2602MT ID , Drain Current (A) RDS(ON) (mΩ) 240 T C =25 o C 200 10V 7.0V 160 6.0V 5.0V 120 4.0V V G = 3.0V 80 40 0 0 0.4 0.8 1.2 1.6 2 V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics ID , Drain Current (A) 120 T C = 150 o C 100 10V 7.0V 80 6.0V 5.0V 4.0V 60 V G = 3.0V 40 20 0 001122 V DS , Drain-to-Source Voltage (V) Fig 2. Typical Output Characteristics 1.3 I D = 20 A T C =25 o C 1.2 1.1 . 1 0.9 0.8 2 4 6 8 10 V GS , Gate-to-Source Voltage (V) Fig 3. On-Resistance v.s. Gate Voltage 100 10 T j =150 o C 1 T j =25 o C Normalized VGS(th) Normalized RDS(ON) 1.8 I D =20A V G =10V 1.6 1.4 1.2 1.0 0.8 0.6 -100 -50 0 50 100 T j , Junction Temperature ( o C) Fig 4. Normalized On-Resistance v.s. Junction Temperature 2.0 I D =1mA 1.6 150 1.2 0.8 0.4 0.1 0 0.2 0.4 0.6 0.8 1 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.2 0.0 -100 -50 0 50 100 T j , Junction Temperature ( o C) 150 Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 IS(A) VGS , Gate to Source Voltage (V) AP2602MT 8 I D = 20 A V DS =15V 6 4 2 0 0 20 40 60 80 100 120 Q G , Total Gate Charge (nC) Fig 7. Gate Charge Characteristics C (pF) f=1.0MHz 10000 8000 C iss 6000 4000 2000 C oss C rss 0 1 5 9 13 17 21 25 29 V DS , Drain-to-Source Voltage (V) Fig 8. Typical Capacitance Characteristics ID (A) 1000 Operation in this area limited by RDS(ON) .


VS-6ESH02HM3 AP2602MT VS-6ESH06-M3


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