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V30DL50CHM3 Dataheets PDF



Part Number V30DL50CHM3
Manufacturers Vishay
Logo Vishay
Description Dual Trench MOS Barrier Schottky Rectifier
Datasheet V30DL50CHM3 DatasheetV30DL50CHM3 Datasheet (PDF)

www.vishay.com V30DL50C-M3, V30DL50CHM3 Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.29 V at IF = 5 A TMBS ® eSMP® Series TO-263AC (SMPD) K 1 2 Top View Bottom View V30DL50C PIN 1 K PIN 2 HEATSINK FEATURES • Trench MOS Schottky technology • Very low profile - typical height of 1.7 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • AEC-Q101 qualified • Meets MSL level 1, per J-STD-020.

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www.vishay.com V30DL50C-M3, V30DL50CHM3 Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.29 V at IF = 5 A TMBS ® eSMP® Series TO-263AC (SMPD) K 1 2 Top View Bottom View V30DL50C PIN 1 K PIN 2 HEATSINK FEATURES • Trench MOS Schottky technology • Very low profile - typical height of 1.7 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • AEC-Q101 qualified • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 15 A TJ max. Package 2 x 15 A 50 V 300 A 0.42 V 150 °C TO-263AC (SMPD) Diode variations Dual common cathode MECHANICAL DATA Case: TO-263AC (SMPD) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade  Base P/NHM3 - halogen-free, RoHS-compliant, and AEC-Q101 qualified Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix meets JESD 201 class 2 whisker test Polarity: As marked MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Maximum repetitive peak reverse voltage Maximum average forward rectified current (fig. 1) per device per diode VRRM IF(AV) Peak forward surge current 10 ms single half sine-wave superimposed on rated load IFSM Operating junction and storage temperature range TJ, TSTG V30DL50C 50 30 15 300 -40 to +150 UNIT V A A °C Revision: 13-Dec-13 1 Document Number: 89963 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com V30DL50C-M3, V30DL50CHM3 Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL Instantaneous forward voltage per diode IF = 5 A IF = 7.5 A IF = 15 A IF = 5 A IF = 7.5 A IF = 15 A Reverse current per diode VR = 50 V Typical junction capacitance 4.0 V, 1 MHz Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width  40 ms TA = 25 °C TA = 125 °C TA = 25 °C TA = 125 °C TA = 25 °C VF (1) IR (2) CJ TYP. 0.39 0.42 0.49 0.29 0.33 0.42 25 2800 MAX. 0.57 0.50 1800 60 - UNIT V μA mA pF THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL V30DL50C Typical thermal resistance per diode per device per device RJC RJA (1)(2) 1.7 0.9 45 Notes (1) The heat generated must be less than the thermal conductivity from junction-to-ambient: dPD/dTJ < 1/RJA (2) Free air, without heatsink UNIT °C/W ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) TO-263AC (SMPD) V30DL50C-M3/I 0.55 TO-263AC (SMPD) (1) V30DL50CHM3/I 0.55 Note (1) AEC-Q101 qualified PACKAGE CODE BASE QUANTITY DELIVERY MODE I 2000/reel 13" diameter plastic tape and reel I 2000/reel 13" diameter plastic tape and reel RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) Average Forward Rectified Current (A) Average Power Loss (W) 32 28 24 20 16 12 RthJA= 45 °C/W 8 4 0 0 25 50 75 100 125 150 Case Temperature (°C) (D = duty cycle = 0.5) Fig. 1 - Forward Current Derating Curve 9 8 D = 0.8 D = 0.5 7 D = 0.3 6 D = 0.2 D = 1.0 5 4 D = 0.1 3T 2 1 0 024 D = tp/T tp 6 8 10 12 14 16 18 Average Forward Current (A) Fig. 2 - Forward Power Loss Characteristics Per Diode Revision: 13-Dec-13 2 Document Number: 89963 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com Instantaneous Forward Current (A) 100 TA = 150 °C 10 TA = 125 °C TA = 100 °C 1 TA = 25 °C 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Instantaneous Forward Voltage (V) Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode Instantaneous Reverse Current (mA) 100 TA = 150 °C TA = 125 °C 10 TA = 100 °C 1 0.1 TA= 25 °C 0.01 20 40 60 80 100 Percent of Rated Peak Reverse Voltage (%) Fig. 4 - Typical Reverse Characteristics Per Diode 10 000 TJ = 25 °C f = 1.0 MHz VSIG = 50 mVp-p 1000 V30DL50C-M3, V30DL50CHM3 Vishay General Semiconductor 100 Junction to Ambient 10 Transient Thermal Impedance (°C/W) 1 Thermal Resistance (°C/W) 0.1 0.01 0.1 1 10 100 t -Pulse Duration (s) Fig. 6 - Typical Transient Thermal Impedance Per Device 50 Epoxy printed circuit 45 boa.


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