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V30DL50C-M3, V30DL50CHM3
Vishay General Semiconductor
Dual Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.29 V at IF = 5 A
TMBS ® eSMP® Series TO-263AC (SMPD)
K
1
2 Top View
Bottom View
V30DL50C
PIN 1
K
PIN 2
HEATSINK
FEATURES • Trench MOS Schottky technology • Very low profile - typical height of 1.7 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • AEC-Q101 qualified • Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C • Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection.
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM VF at IF = 15 A TJ max. Package
2 x 15 A 50 V 300 A 0.42 V
150 °C TO-263AC (SMPD)
Diode variations
Dual common cathode
MECHANICAL DATA
Case: TO-263AC (SMPD) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Base P/NHM3 - halogen-free, RoHS-compliant, and AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix meets JESD 201 class 2 whisker test
Polarity: As marked
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (fig. 1)
per device per diode
VRRM IF(AV)
Peak forward surge current 10 ms single half sine-wave superimposed on rated load
IFSM
Operating junction and storage temperature range
TJ, TSTG
V30DL50C 50 30 15
300
-40 to +150
UNIT V A
A °C
Revision: 13-Dec-13
1 Document Number: 89963
For technical questions within your region:
[email protected],
[email protected],
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
V30DL50C-M3, V30DL50CHM3
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
Instantaneous forward voltage per diode
IF = 5 A IF = 7.5 A IF = 15 A IF = 5 A IF = 7.5 A IF = 15 A
Reverse current per diode
VR = 50 V
Typical junction capacitance
4.0 V, 1 MHz
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms
TA = 25 °C
TA = 125 °C
TA = 25 °C TA = 125 °C TA = 25 °C
VF (1)
IR (2) CJ
TYP.
0.39 0.42 0.49 0.29 0.33 0.42
25 2800
MAX.
0.57 0.50 1800 60 -
UNIT
V
μA mA pF
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
V30DL50C
Typical thermal resistance
per diode per device per device
RJC RJA (1)(2)
1.7 0.9 45
Notes
(1) The heat generated must be less than the thermal conductivity from junction-to-ambient: dPD/dTJ < 1/RJA (2) Free air, without heatsink
UNIT °C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
TO-263AC (SMPD)
V30DL50C-M3/I
0.55
TO-263AC (SMPD) (1) V30DL50CHM3/I
0.55
Note (1) AEC-Q101 qualified
PACKAGE CODE BASE QUANTITY
DELIVERY MODE
I
2000/reel
13" diameter plastic tape and reel
I
2000/reel
13" diameter plastic tape and reel
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
Average Forward Rectified Current (A) Average Power Loss (W)
32 28
24 20
16 12
RthJA= 45 °C/W 8
4 0
0 25 50 75 100 125 150 Case Temperature (°C) (D = duty cycle = 0.5)
Fig. 1 - Forward Current Derating Curve
9
8
D = 0.8 D = 0.5
7 D = 0.3 6 D = 0.2
D = 1.0
5 4 D = 0.1
3T 2
1
0 024
D = tp/T
tp
6 8 10 12 14 16 18
Average Forward Current (A)
Fig. 2 - Forward Power Loss Characteristics Per Diode
Revision: 13-Dec-13
2 Document Number: 89963
For technical questions within your region:
[email protected],
[email protected],
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
Instantaneous Forward Current (A)
100
TA = 150 °C 10 TA = 125 °C
TA = 100 °C 1
TA = 25 °C
0.1 0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
Instantaneous Forward Voltage (V) Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
Instantaneous Reverse Current (mA)
100 TA = 150 °C TA = 125 °C
10 TA = 100 °C
1
0.1 TA= 25 °C
0.01 20 40 60 80 100 Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics Per Diode
10 000
TJ = 25 °C f = 1.0 MHz VSIG = 50 mVp-p
1000
V30DL50C-M3, V30DL50CHM3
Vishay General Semiconductor
100 Junction to Ambient
10
Transient Thermal Impedance (°C/W)
1
Thermal Resistance (°C/W)
0.1 0.01
0.1
1
10 100
t -Pulse Duration (s) Fig. 6 - Typical Transient Thermal Impedance Per Device
50 Epoxy printed circuit
45 boa.