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DMC2041UFDB Dataheets PDF



Part Number DMC2041UFDB
Manufacturers Diodes
Logo Diodes
Description MOSFET
Datasheet DMC2041UFDB DatasheetDMC2041UFDB Datasheet (PDF)

DMC2041UFDB COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Device V(BR)DSS Q1 N-Channel Q2 P-Channel 20V -20V RDS(ON) max 40mΩ @ VGS = 4.5V 65mΩ @ VGS = 2.5V 90mΩ @ VGS = -4.5V 137mΩ @ VGS = -2.5V ID MAX TA = +25°C 4.7A 3.7A -3.2A -2.6A Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applications  Load Switch  Power Management.

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DMC2041UFDB COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Device V(BR)DSS Q1 N-Channel Q2 P-Channel 20V -20V RDS(ON) max 40mΩ @ VGS = 4.5V 65mΩ @ VGS = 2.5V 90mΩ @ VGS = -4.5V 137mΩ @ VGS = -2.5V ID MAX TA = +25°C 4.7A 3.7A -3.2A -2.6A Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applications  Load Switch  Power Management Functions  Portable Power Adaptors U-DFN2020-6 ESD PROTECTED S2 G2 D2 D1 D2 G1 S1 Pin1 Bottom View D1 Features  Low On-Resistance  Low Input Capacitance  Low Profile, 0.6mm Max Height  ESD protected Gate  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3) Mechanical Data  Case: U-DFN2020-6  Case Material: Molded Plastic, “Green” Molding Compound; UL Flammability Classification Rating 94V-0  Moisture Sensitivity: Level 1 per J-STD-020  Terminals: Finish NiPdAu over Copper Leadframe; Solderable per MIL-STD-202, Method 208 e4  Terminal Connections: See Diagram Below  Weight: 0.0065 grams (Approximate) D1 D2 G1 G2 Gate Protection Diode S1 Gate Protection Diode S2 Q1 N-CHANNEL MOSFET Q2 P-CHANNEL MOSFET Internal Schematic Ordering Information (Note 4) Notes: Part Number DMC2041UFDB -7 DMC2041UFDB -13 Case U-DFN2020-6 U-DFN2020-6 Packaging 3,000/Tape & Reel 10,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information Date Code Key Year Code Month Code 2014 B Jan Feb 12 U-DFN2020-6 D4 YM D4 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: B = 2014) M = Month (ex: 9 = September) 2015 C Mar 3 2016 D Apr May 45 2017 E Jun Jul 67 2018 F Aug 8 Sep 9 2019 G Oct O 2020 H Nov Dec ND DMC2041UFDB Document number: DS37420 Rev. 2 - 2 1 of 9 www.diodes.com February 2015 © Diodes Incorporated DMC2041UFDB Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 5) VGS = 4.5V Steady State t < 5s Maximum Continuous Body Diode Forward Current (Note 5) Pulsed Drain Current (10µs pulse, duty cycle = 1%) TA = +25°C TA = +70°C TA = +25°C TA = +70°C Symbol VDSS VGSS ID ID IS IDM Q1 N-CHANNEL 20 ±12 4.7 3.8 6.1 4.9 2 30 Q2 P-CHANNEL -20 ±12 -3.2 -2.5 -4.1 -3.2 -1.5 -18 Units V V A A A A Thermal Characteristics Characteristic Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Thermal Resistance, Junction to Case (Note 5) Operating and Storage Temperature Range Steady State t < 5s Steady State t < 5s Symbol PD RJA RJC TJ, TSTG Value 1.4 2.2 92 55 30 -55 to 150 Units W °C/W °C Electrical Characteristics Q1 N-CHANNEL (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = +25°C Gate-Source Leakage ON CHARACTERISTICS (Note 6) Gate Threshold Voltage Static Drain-Source On-Resistance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = 4.5V) Total Gate Charge (VGS = 8V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Symbol Min BVDSS IDSS IGSS 20 — — VGS(th) RDS (ON) VSD 0.35 — — — Ciss Coss Crss Rg Qg Qgs Qgd tD(on) tr tD(off) tf trr Qrr — — — — — — — — — — — — — — Typ — — — — 23 26 0.7 713 80 68 15 8 15 1.0 1.1 3.6 15.9 16.0 2.6 6.6 1.2 Notes: 5. Device mounted on 1” x 1” FR-4 PCB with high coverage 2oz. Copper, single sided. 6. Short duration pulse test used to minimize self-heating effect. 7. Guaranteed by design. Not subject to product testing. Max — 1.0 ±10 1.4 40 65 1.2 — — — — — — — — — — — — — — Unit Test Condition V VGS = 0V, ID = 250μA μA VDS = 20V, VGS = 0V μA VGS = ±8V, VDS = 0V V VDS = VGS, ID = 250μA mΩ VGS = 4.5V, ID = 4.2A VGS = 2.5V, ID = 3.3A V VGS = 0V, IS = 4.4A pF pF VDS = 10V, VGS = 0V, f = 1.0MHz pF Ω VDS = 0V, VGS = 0V, f = 1MHz nC nC nC VDS = 10V, ID = 5.5A nC ns ns VDD = 10V, VGS = 4.5V, ns RL = 2.3Ω, RG = 1Ω ns nS IS = 4.4A, dI/dt = 100A/μs nC IS = 4.4A, dI/dt = 100A/μs DMC2041UFDB Document number: DS37420 Rev. 2 - 2 2 of 9 www.diodes.com February 2015 © Diodes Incorporated DMC2041UFDB Electrical Characteristic.


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