Document
DMC2041UFDB
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Product Summary
Device V(BR)DSS
Q1 N-Channel
Q2 P-Channel
20V -20V
RDS(ON) max
40mΩ @ VGS = 4.5V 65mΩ @ VGS = 2.5V 90mΩ @ VGS = -4.5V 137mΩ @ VGS = -2.5V
ID MAX TA = +25°C
4.7A 3.7A -3.2A -2.6A
Description
This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Applications
Load Switch Power Management Functions Portable Power Adaptors
U-DFN2020-6
ESD PROTECTED
S2 G2
D2
D1 D2
G1
S1
Pin1
Bottom View
D1
Features
Low On-Resistance Low Input Capacitance Low Profile, 0.6mm Max Height ESD protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3)
Mechanical Data
Case: U-DFN2020-6 Case Material: Molded Plastic, “Green” Molding Compound;
UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish NiPdAu over Copper Leadframe; Solderable per
MIL-STD-202, Method 208 e4 Terminal Connections: See Diagram Below Weight: 0.0065 grams (Approximate)
D1 D2
G1 G2
Gate Protection Diode
S1
Gate Protection Diode
S2
Q1 N-CHANNEL MOSFET
Q2 P-CHANNEL MOSFET
Internal Schematic
Ordering Information (Note 4)
Notes:
Part Number DMC2041UFDB -7 DMC2041UFDB -13
Case U-DFN2020-6 U-DFN2020-6
Packaging 3,000/Tape & Reel 10,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Date Code Key Year Code
Month Code
2014 B
Jan Feb 12
U-DFN2020-6
D4
YM
D4 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: B = 2014) M = Month (ex: 9 = September)
2015 C
Mar 3
2016 D
Apr May 45
2017 E
Jun Jul 67
2018 F
Aug 8
Sep 9
2019 G
Oct O
2020 H
Nov Dec ND
DMC2041UFDB
Document number: DS37420 Rev. 2 - 2
1 of 9 www.diodes.com
February 2015
© Diodes Incorporated
DMC2041UFDB
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current (Note 5) VGS = 4.5V
Steady State
t < 5s
Maximum Continuous Body Diode Forward Current (Note 5) Pulsed Drain Current (10µs pulse, duty cycle = 1%)
TA = +25°C TA = +70°C TA = +25°C TA = +70°C
Symbol VDSS VGSS ID
ID IS IDM
Q1 N-CHANNEL
20 ±12
4.7 3.8
6.1 4.9
2 30
Q2 P-CHANNEL
-20 ±12
-3.2 -2.5
-4.1 -3.2 -1.5
-18
Units V V A
A A A
Thermal Characteristics
Characteristic Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5) Thermal Resistance, Junction to Case (Note 5) Operating and Storage Temperature Range
Steady State t < 5s
Steady State t < 5s
Symbol PD
RJA RJC TJ, TSTG
Value 1.4 2.2 92 55 30
-55 to 150
Units W
°C/W °C
Electrical Characteristics Q1 N-CHANNEL (@TA = +25°C, unless otherwise specified.)
Characteristic OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = +25°C Gate-Source Leakage ON CHARACTERISTICS (Note 6) Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = 4.5V) Total Gate Charge (VGS = 8V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge
Symbol Min
BVDSS IDSS IGSS
20 — —
VGS(th) RDS (ON)
VSD
0.35 — — —
Ciss Coss Crss Rg
Qg
Qgs Qgd tD(on)
tr tD(off)
tf trr Qrr
— — — — — — — — — — — — — —
Typ
— — —
— 23 26 0.7
713 80 68 15 8 15 1.0 1.1 3.6 15.9 16.0 2.6 6.6 1.2
Notes:
5. Device mounted on 1” x 1” FR-4 PCB with high coverage 2oz. Copper, single sided. 6. Short duration pulse test used to minimize self-heating effect. 7. Guaranteed by design. Not subject to product testing.
Max
— 1.0 ±10
1.4 40 65 1.2
— — — — — — — — — — — — — —
Unit
Test Condition
V VGS = 0V, ID = 250μA μA VDS = 20V, VGS = 0V μA VGS = ±8V, VDS = 0V
V VDS = VGS, ID = 250μA mΩ VGS = 4.5V, ID = 4.2A
VGS = 2.5V, ID = 3.3A V VGS = 0V, IS = 4.4A
pF pF VDS = 10V, VGS = 0V,
f = 1.0MHz pF Ω VDS = 0V, VGS = 0V, f = 1MHz nC
nC nC VDS = 10V, ID = 5.5A
nC
ns
ns VDD = 10V, VGS = 4.5V, ns RL = 2.3Ω, RG = 1Ω
ns nS IS = 4.4A, dI/dt = 100A/μs nC IS = 4.4A, dI/dt = 100A/μs
DMC2041UFDB
Document number: DS37420 Rev. 2 - 2
2 of 9 www.diodes.com
February 2015
© Diodes Incorporated
DMC2041UFDB
Electrical Characteristic.