Document
NEW PNREOWDUPCRTODUCT
DMC3400SDW
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Product Summary
Device V(BR)DSS Q1 30 Q2 -30
RDS(ON) max
0.4Ω @ VGS = 10V 0.7Ω @ VGS = 4.5V 0.9Ω @ VGS = -10V 1.7Ω @ VGS = -4.5V
ID max TA = +25°C
0.65A 0.52A
-0.45A
-0.33A
Description and Applications
This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Motor Control Power Management Functions DC-DC Converters
SOT363
G1
Features and Benefits
Low On-Resistance Low Input Capacitance Fast Switching Speed ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3)
Mechanical Data
Case: SOT363 Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections Indicator: See Diagram Terminals: Finish Matte Tin Annealed over Copper
Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.027 grams (Approximate)
D1 G2
D2
D1 G2 S2
ESD PROTECTED
Top View
Gate Protection Diode
S1
Q1 N-CHANNEAL
Gate Protection Diode
S2
Q2 P-CHANNEAL
S1 G1 D2
Top View Pin out
Ordering Information (Note 4)
Notes:
Part Number DMC3400SDW-7 DMC3400SDW-13
Case SOT363 SOT363
Packaging 3000/Tape & Reel 10000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Date Code Key Year Code
Month Code
2014 B
Jan Feb 12
DMC3400SDW
Document number: DS37690 Rev. 1 - 2
CSI
YM
CSI = Product Type Marking Code YM = Date Code Marking Y or Y= Year (ex: B = 2014) M = Month (ex: 9 = September)
2015 C
Mar 3
2016 D
Apr May 45
2017 E
Jun Jul 67
1 of 9 www.diodes.com
2018 F
Aug 8
Sep 9
2019 G
Oct O
2020 H
Nov Dec ND
February 2015
© Diodes Incorporated
NEW PNREOWDUPCRTODUCT
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 6) VGS = 10V
Steady State
Maximum Continuous Body Diode Forward Current (Note 6)
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)
TA = +25C TA = +70C
Symbol VDSS VGSS
ID
IS IDM
Value_Q1 30 ±20
0.65 0.50
0.4 4
DMC3400SDW
Value_Q2 -30 ±20
-0.45 -0.36
-0.35 -3
Units V V
A
A A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Thermal Resistance, Junction to Case Operating and Storage Temperature Range
Steady State Steady State
Symbol PD RθJA PD RθJA RθJC
TJ, TSTG
Value 0.31 406 0.39 319 126 -55 to +150
Units W
°C/W W
°C/W °C/W
°C
Electrical Characteristics – N Channel – Q1 (@TA = +25°C, unless otherwise specified.)
Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = 4.5V) Total Gate Charge (VGS = 10V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time
Symbol
BVDSS IDSS IGSS
VGS(TH)
RDS(ON)
VSD
Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(ON)
tR tD(OFF)
tF
Min
30 -
0.8 -
-
Typ
-
0.2 0.3 0.8
55 8.5 6.5 92 0.6 1.4 0.2 0.1 3.8 3.5 25.2 18.8
Max
1 ±10
1.6 0.4 0.7 1.2
-
Unit
Test Condition
V VGS = 0V, ID = 250μA μA VDS = 24V, VGS = 0V μA VGS = ±16V, VDS = 0V
V VDS = VGS, ID = 250μA Ω VGS = 10V, ID = 0.59A
VGS = 4.5V, ID = 0.2A V VGS = 0V, IS = 0.23A
pF
pF
VDS = 15V, VGS = 0V, f = 1.0MHz
pF
Ω VDS = VGS = 0V, f = 1.0MHz nC
nC VDS = 10V, nC ID = 250mA
nC
ns
ns VGS = 10V, VDS = 30V, ns ID = 100mA, RG = 1Ω
ns
DMC3400SDW
Document number: DS37690 Rev. 1 - 2
2 of 9 www.diodes.com
February 2015
© Diodes Incorporated
NEW PNREOWDUPCRTODUCT
DMC3400SDW
Electrical Characteristics – P Channel – Q2 (@TA = +25°C, unless otherwise specified.)
Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Outpu.