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DMC3400SDW Dataheets PDF



Part Number DMC3400SDW
Manufacturers Diodes
Logo Diodes
Description MOSFET
Datasheet DMC3400SDW DatasheetDMC3400SDW Datasheet (PDF)

NEW PNREOWDUPCRTODUCT DMC3400SDW COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Device V(BR)DSS Q1 30 Q2 -30 RDS(ON) max 0.4Ω @ VGS = 10V 0.7Ω @ VGS = 4.5V 0.9Ω @ VGS = -10V 1.7Ω @ VGS = -4.5V ID max TA = +25°C 0.65A 0.52A -0.45A -0.33A Description and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.  Motor Control  Power Manage.

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NEW PNREOWDUPCRTODUCT DMC3400SDW COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Device V(BR)DSS Q1 30 Q2 -30 RDS(ON) max 0.4Ω @ VGS = 10V 0.7Ω @ VGS = 4.5V 0.9Ω @ VGS = -10V 1.7Ω @ VGS = -4.5V ID max TA = +25°C 0.65A 0.52A -0.45A -0.33A Description and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.  Motor Control  Power Management Functions  DC-DC Converters SOT363 G1 Features and Benefits  Low On-Resistance  Low Input Capacitance  Fast Switching Speed  ESD Protected Gate  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3) Mechanical Data  Case: SOT363  Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0  Moisture Sensitivity: Level 1 per J-STD-020  Terminal Connections Indicator: See Diagram  Terminals: Finish  Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208  Weight: 0.027 grams (Approximate) D1 G2 D2 D1 G2 S2 ESD PROTECTED Top View Gate Protection Diode S1 Q1 N-CHANNEAL Gate Protection Diode S2 Q2 P-CHANNEAL S1 G1 D2 Top View Pin out Ordering Information (Note 4) Notes: Part Number DMC3400SDW-7 DMC3400SDW-13 Case SOT363 SOT363 Packaging 3000/Tape & Reel 10000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information Date Code Key Year Code Month Code 2014 B Jan Feb 12 DMC3400SDW Document number: DS37690 Rev. 1 - 2 CSI YM CSI = Product Type Marking Code YM = Date Code Marking Y or Y= Year (ex: B = 2014) M = Month (ex: 9 = September) 2015 C Mar 3 2016 D Apr May 45 2017 E Jun Jul 67 1 of 9 www.diodes.com 2018 F Aug 8 Sep 9 2019 G Oct O 2020 H Nov Dec ND February 2015 © Diodes Incorporated NEW PNREOWDUPCRTODUCT Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 6) VGS = 10V Steady State Maximum Continuous Body Diode Forward Current (Note 6) Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) TA = +25C TA = +70C Symbol VDSS VGSS ID IS IDM Value_Q1 30 ±20 0.65 0.50 0.4 4 DMC3400SDW Value_Q2 -30 ±20 -0.45 -0.36 -0.35 -3 Units V V A A A Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Thermal Resistance, Junction to Case Operating and Storage Temperature Range Steady State Steady State Symbol PD RθJA PD RθJA RθJC TJ, TSTG Value 0.31 406 0.39 319 126 -55 to +150 Units W °C/W W °C/W °C/W °C Electrical Characteristics – N Channel – Q1 (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Static Drain-Source On-Resistance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = 4.5V) Total Gate Charge (VGS = 10V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Symbol BVDSS IDSS IGSS VGS(TH) RDS(ON) VSD Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(ON) tR tD(OFF) tF Min 30 - 0.8 - - Typ - 0.2 0.3 0.8 55 8.5 6.5 92 0.6 1.4 0.2 0.1 3.8 3.5 25.2 18.8 Max 1 ±10 1.6 0.4 0.7 1.2 - Unit Test Condition V VGS = 0V, ID = 250μA μA VDS = 24V, VGS = 0V μA VGS = ±16V, VDS = 0V V VDS = VGS, ID = 250μA Ω VGS = 10V, ID = 0.59A VGS = 4.5V, ID = 0.2A V VGS = 0V, IS = 0.23A pF pF VDS = 15V, VGS = 0V, f = 1.0MHz pF Ω VDS = VGS = 0V, f = 1.0MHz nC nC VDS = 10V, nC ID = 250mA nC ns ns VGS = 10V, VDS = 30V, ns ID = 100mA, RG = 1Ω ns DMC3400SDW Document number: DS37690 Rev. 1 - 2 2 of 9 www.diodes.com February 2015 © Diodes Incorporated NEW PNREOWDUPCRTODUCT DMC3400SDW Electrical Characteristics – P Channel – Q2 (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Static Drain-Source On-Resistance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Outpu.


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