N-Channel MOSFET
Features
• Low On-Resistance • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Low Gate Resist...
Description
Features
Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Low Gate Resistance Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) Qualified to AEC-Q101 Standards for High Reliability
DMG4466SSSL
N-CHANNEL ENHANCEMENT MODE MOSFET
Mechanical Data
Case: SO-8 Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Below Marking Information: See Page 5 Ordering Information: See Page 5 Weight: 0.072 grams (approximate)
SO-8
TOP VIEW
SD
SD SD GD
TOP VIEW Internal Schematic
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 3) Pulsed Drain Current (Note 4)
Steady State
TA = 25°C TA = 85°C
Avalanche Current (Notes 4 & 5)
Repetitive Avalanche Energy (Notes 4 & 5) L = 0.1mH
Symbol VDSS VGSS
ID
IDM IAR EAR
Value 30 ±20
10 6
60 16 12.8
Unit V V
A
A A mJ
Thermal Characteristics
Characteristic Power Dissipation (Note 3) Thermal Resistance, Junction to Ambient @TA = 25°C (Note 3) Operating and Storage Temperature Range
Symbol PD RθJA
TJ, TSTG
Value 1.42 88.4 -55 to +150
Unit W
°C/W °C
Notes:
1. No purposefully added lead. 2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com. 3. Device mounted on FR-4 substrate PC board with minimum recommended pad ...
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