Dual N-Channel MOSFET
DMG5802LFX
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS 24V
RDS(ON)
15mΩ @ VGS = 4.5V 20mΩ @ VGS =...
Description
DMG5802LFX
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS 24V
RDS(ON)
15mΩ @ VGS = 4.5V 20mΩ @ VGS = 2.5V
ID TA = +25°C
6.5A
5.6A
Description
This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Applications
DC-DC Converters Power management functions
Features
Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage ESD Protected up to 3kV Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: W-DFN5020-6 Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Below Weight: 0.03 grams (approximate)
G1 S1 S1
W-DFN5020-6
D1/D2
D1 D2 G1 G2
ESD PROTECTED TO 3kV
Top View
Bottom View
G2 S2 S2
Top View Pin-Out
S1 S2 Equivalent Circuit
Ordering Information (Note 4)
Notes:
Part Number DMG5802LFX-7
Case W-DFN5020-6
Packaging 3000 / Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lea...
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