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2N6040 Dataheets PDF



Part Number 2N6040
Manufacturers Central Semiconductor
Logo Central Semiconductor
Description COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
Datasheet 2N6040 Datasheet2N6040 Datasheet (PDF)

2N6040 2N6041 2N6042 PNP 2N6043 2N6044 2N6045 NPN COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6040 and 2N6043 Series types are Complementary Silicon Power Transistors, manufactured by the epitaxial base process, designed for general purpose amplifier applications. MARKING: FULL PART NUMBER TO-220 CASE MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous C.

  2N6040   2N6040


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2N6040 2N6041 2N6042 PNP 2N6043 2N6044 2N6045 NPN COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6040 and 2N6043 Series types are Complementary Silicon Power Transistors, manufactured by the epitaxial base process, designed for general purpose amplifier applications. MARKING: FULL PART NUMBER TO-220 CASE MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC ICM IB PD TJ, Tstg ΘJC 2N6040 2N6043 60 60 2N6041 2N6044 80 80 5.0 8.0 16 120 75 -65 to +150 1.67 2N6042 2N6045 100 100 ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS ICBO ICEV ICEV ICEO IEBO BVCEO BVCEO BVCEO VCE(SAT) VCE(SAT) VCE(SAT) VBE(SAT) VBE(ON) hFE hFE hFE VCB=Rated VCBO VCE=Rated VCEO, VBE(OFF)=1.5V VCE=Rated VCEO, VBE(OFF)=1.5V, TC=150°C VCE=Rated VCEO VEB=5.0V IC=100mA (2N6040, 2N6043) IC=100mA (2N6041, 2N6044) IC=100mA (2N6042, 2N6045) IC=4.0A, IB=16mA (2N6040, 2N6041, 2N6043, 2N6044) IC=3.0A, IB=12mA (2N6042, 2N6045) IC=8.0A, IB=80mA IC=8.0A, IB=80mA VCE=4.0V, IC=4.0A VCE=4.0V, IC=4.0A (2N6040, 2N6041, 2N6043, 2N6044) VCE=4.0V, IC=3.0A (2N6042, 2N6045) VCE=4.0V, IC=8.0A MIN 60 80 100 1,000 1,000 100 MAX 20 20 200 20 2.0 2.0 2.0 4.0 4.5 2.8 20,000 20,000 UNITS V V V A A mA W °C °C/W UNITS µA µA µA µA mA V V V V V V V V R1 (16-November 2009) 2N6040 2N6041 2N6042 PNP 2N6043 2N6044 2N6045 NPN COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS ELECTRICAL CHARACTERISTICS - Continued: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX hfe VCE=4.0V, IC=3.0A, f=1.0kHz 300 fT VCE=4.0V, IC=3.0A, f=1.0MHz 4.0 Cob VCB=10V, IE=0, f=100kHz (NPN Types) Cob VCB=10V, IE=0, f=100kHz (PNP Types) 200 300 TO-220 CASE - MECHANICAL OUTLINE UNITS MHz pF pF w w w. c e n t r a l s e m i . c o m LEAD CODE: 1) BASE 2) COLLECTOR 3) EMITTER 4) COLLECTOR MARKING: FULL PART NUMBER R1 (16-November 2009) .


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