2N6040 2N6041 2N6042 PNP 2N6043 2N6044 2N6045 NPN
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
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2N6040 2N6041 2N6042
PNP 2N6043 2N6044 2N6045
NPN
COMPLEMENTARY SILICON POWER DARLINGTON
TRANSISTORS
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DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6040 and 2N6043 Series types are Complementary Silicon Power
Transistors, manufactured by the epitaxial base process, designed for general purpose amplifier applications.
MARKING: FULL PART NUMBER
TO-220 CASE
MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance
SYMBOL VCBO VCEO VEBO IC ICM IB PD TJ, Tstg ΘJC
2N6040 2N6043
60
60
2N6041 2N6044
80 80 5.0 8.0 16 120 75 -65 to +150 1.67
2N6042 2N6045
100
100
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
ICBO ICEV ICEV ICEO IEBO BVCEO BVCEO BVCEO VCE(SAT) VCE(SAT) VCE(SAT) VBE(SAT) VBE(ON) hFE hFE hFE
VCB=Rated VCBO VCE=Rated VCEO, VBE(OFF)=1.5V VCE=Rated VCEO, VBE(OFF)=1.5V, TC=150°C VCE=Rated VCEO VEB=5.0V IC=100mA (2N6040, 2N6043) IC=100mA (2N6041, 2N6044) IC=100mA (2N6042, 2N6045) IC=4.0A, IB=16mA (2N6040, 2N6041, 2N6043, 2N6044) IC=3.0A, IB=12mA (2N6042, 2N6045) IC=8.0A, IB=80mA IC=8.0A, IB=80mA VCE=4.0V, IC=4.0A VCE=4.0V, IC=4.0A (2N6040, 2N6041, 2N6043, 2N6044) VCE=4.0V, IC=3.0A (2N6042, 2N6045) VCE=4.0V, IC=8.0A
MIN
60 80 100
1,000 1,000 100
MAX 20 20 200 20 2.0
2.0 2.0 4.0 4.5 2.8 20,000 20,000
UNITS V V V A A...
