Document
2N6298 2N6299 PNP 2N6300 2N6301 NPN
COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6298 series devices are complementary silicon Darlington power transistors manufactured by the epitaxial base process designed for high gain amplifier and medium speed switching applications.
MARKING: FULL PART NUMBER
TO-66 CASE
MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Continuous Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance
SYMBOL VCBO VCEO VEBO IC ICM IB PD TJ, Tstg ΘJC
2N6298 2N6300
60
2N6299 2N6301
80
60 80
5.0
8.0
16
120
75
-65 to +200
2.33
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
ICEV
VCE=Rated VCEO, VBE=1.5V
ICEV
VCE=Rated VCEO, VBE=1.5V, TC=150°C
ICEO
VCE=½Rated VCEO
IEBO
VEB=5.0V
BVCEO
IC=100mA (2N6298, 2N6300)
60
BVCEO
IC=100mA (2N6299, 2N6301)
80
VCE(SAT) IC=4.0A, IB=16mA
VCE(SAT) IC=8.0A, IB=80mA
VBE(SAT) IC=8.0A, IB=80mA
VBE(ON)
VCE=3.0V, IC=4.0A
hFE VCE=3.0V, IC=4.0A
750
hFE VCE=3.0V, IC=8.0A
100
hfe VCE=3.0V, IC=3.0A, f=1.0kHz
300
fT VCE=3.0V, IC=3.0A, f=1.0MHz
4.0
Cob VCB=10V, IE=0, f=100kHz (NPN types)
Cob VCB=10V, IE=0, f=100kHz (PNP types)
MAX 0.5 5.0 0.5 2.0
2.0 3.0 4.0 2.8 18K
200 300
UNITS V V V A A mA W °C
°C/W
UNITS mA mA mA mA V V V V V V
MHz pF pF
R3 (2-September 2014)
2N6298 2N6299 PNP 2N6300 2N6301 NPN COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS
TO-66 CASE - MECHANICAL OUTLINE
MARKING: FULL PART NUMBER
w w w. c e n t r a l s e m i . c o m
R3 (2-September 2014)
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