2N6298

SavantIC Semiconductor Silicon PNP Power Transistors DESCRIPTION ·With TO-66 package ·DARLINGTON ·Low collector saturation voltage ·Complement to type 2N6300/6301 APPLICATIONS ·General purpose power amplifier and low frequency switching applications PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Product Specification 2N6298 2N6299 Fig.1 simplified outline (TO-66) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER VCBO Collector-base voltage 2N6298 2N6299 VCEO Collector-emitter voltage 2N6298 2N6299 VEBO IC ICM IB PT Tj Tstg Emitter-base voltage Collector current Collector current-peak Base current Total power dissipation Junction temperature Storage temperature CONDITIONS Open emitter Open base Open collector TC=25 THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-C Thermal resistance from junction to case VALUE -60 -80 -60 -80 -5 -8 -16 -0.12 75 200 -65~200 UNIT V V V A A A W MAX 2.33 UNIT /W SavantIC Semiconductor Silicon PNP Power Transistors Product Specification 2N6298 2N6299 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-emitter sustaining voltage 2N6298 2N6299 IC=-0.1A ; IB=0 VCEsat-1 Collector-emitter saturation voltage IC=-4A; IB=-16mA VCEsat-2 Collector-emitter saturation voltage IC=-8A; IB=-80mA VBEsat Base-emitter saturation voltage IC=-8A; IB=-80mA VBE Base -emitter on voltage IC=-4A ; VCE=-3V 2N6298 VCE=-60V; VBE(off)=-1.5V TC=150 ICEX Collector cu...