2N6301

TECHNICAL DATA PNP DARLINGTON POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/539 Devices 2N6300 2N6301 Qualified Level JANTX JANTXV MAXIMUM RATINGS Ratings Symbol Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation @ TC = 00C (1) @ TC = 1000C VCEO VCBO VEBO IB IC PT Operating & Storage Junction Temperature Range TJ, Tstg 1) Derate linearly 0.428 W/0C above TC > 00C 2N6300 2N6301 60 80 60 80 5.0 120 8.0 75 32 -55 to +200 ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted) Characteristics Symbol OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 100 mAdc 2N6300 2N6301 V(BR)CEO Collector-Emitter Cutoff Current VCE = 30 Vdc 2N6300 ICEO VCE = 40 Vdc Collector-Emitter Cutoff Current 2N6301 VCE = 60 Vdc, VBE = -1.5 Vdc 2N6300 ICEX VCE = 80 Vdc, VBE = -1.5 Vdc Emitter-Base Cutoff Current 2N6301 VEB = 5.0 Vdc IEBO Units Vdc Vdc Vdc mAdc Adc W W 0C Min. 60 80 TO-66* (TO-213AA) *See appendix A for package outline Max. Unit Vdc 0.5 mAdc 0.5 0.5 mAdc 0.5 2.0 mAdc 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 120101 Page 1 of 2 2N6300, 2N6301 JAN SERIES ELECTRICAL CHARACTERISTICS (con’t) Characteristics ON CHARACTERISTICS (2) Forward-Current Transfer Ratio IC = 1.0 Adc, VCE = 3.0 Vdc IC = 4.0 Adc, VCE = 3.0 Vdc IC = 8.0 Adc, VCE = 3.0 Vdc Collector-Emitter Saturation Voltage IC = 4.0 Adc, IB = 16 mAdc ...