2N6300

SavantIC Semiconductor Silicon NPN Power Transistors Product Specification 2N6300 2N6301 DESCRIPTION ·With TO-66 package ·DARLINGTON ·Low collector saturation voltage ·Complement to type 2N6298/6299 APPLICATIONS ·General purpose power amplifier and low frequency switching applications PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-66) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER VCBO Collector-base voltage 2N6300 2N6301 VCEO Collector-emitter voltage 2N6300 2N6301 VEBO IC ICM IB PT Tj Tstg Emitter-base voltage Collector current Collector current-peak Base current Total power dissipation Junction temperature Storage temperature CONDITIONS Open emitter Open base Open collector TC=25 THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-C Thermal resistance from junction to case VALUE 60 80 60 80 5 8 16 0.12 75 200 -65~200 UNIT V V V A A A W MAX 2.33 UNIT /W SavantIC Semiconductor Silicon NPN Power Transistors Product Specification 2N6300 2N6301 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-emitter sustaining voltage 2N6300 2N6301 IC=0.1A ; IB=0 VCEsat-1 Collector-emitter saturation voltage IC=4A; IB=16mA VCEsat-2 Collector-emitter saturation voltage IC=8A; IB=80mA VBEsat Base-emitter saturation voltage IC=8A; IB=80mA VBE Base -emitter on voltage IC=4A ; VCE=3V 2N6300 VCE=60V; VBE(off)=1.5V TC=150 ICEX Collector cut-off current 2N...