BCV47

BCV47 TRANSISTOR (NPN) FEATURES  High Collector Current  High Current Gain MARKING:FG SOT–23 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value VCBO Collector-Base Voltage 80 VCEO Collector-Emitter Voltage 60 VEBO Emitter-Base Voltage 10 IC Collector Current 500 PC Collector Power Dissipation 300 RΘJA Thermal Resistance From Junction To Ambient 416 Tj Junction Temperature Tstg Storage Temperature 150 -55～+150 Unit V V V mA mW ℃/W ℃ ℃ 1. BASE 2. EMITTER 3. COLLECTOR ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Collector-base breakdown voltage V(BR)CBO IC=100µA, IE=0 Collector-emitter breakdown voltage V(BR)CEO IC=10mA, IB=0 Emitter-base breakdown voltage V(BR)EBO IE=10µA, IC=0 Collector cut-off current ICBO VCB=60V, IE=0 Emitter cut-off current IEBO VEB=4V, IC=0 hFE(1) VCE=1V, IC=100µA DC current gain hFE(2) hFE(3) VCE=5V, IC=10mA VCE=5V, IC=100mA hFE(4) VCE=5V, IC=0.5A Collector-emitter saturation voltage VCE(sat) IC=100mA, IB=0.1mA Base-emitter saturation voltage VBE(sat) IC=100mA, IB=0.1mA Transition frequency fT VCE=5V,IC=50mA, f=100MHz Collector output capacitance Cob VCB=10V, IE=0, f=1MHz Min 80 60 10 2000 4000 10000 2000 Typ 170 3.5 Max 0.1 0.1 1 1.5 Unit V V V µA µA V V MHz pF JinYu semiconductor www.htsemi.com ...