SavantIC Semiconductor
Silicon NPN Darligton Power Transistors
Product Specification
BD675/BD677/BD679
DESCRIPTION ·Wi...
SavantIC Semiconductor
Silicon
NPN Darligton Power
Transistors
Product Specification
BD675/BD677/BD679
DESCRIPTION ·With TO-126 package ·Complement to type BD676/678/680 ·DARLINGTON ·High DC current gain
APPLICATIONS ·For use as output devices in
complementary general–purpose amplifier applications
PINNING PIN 1 2 3
DESCRIPTION
Emitter Collector;connected to mounting base Base
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
BD675
VCBO
Collector-base voltage BD677
BD679
BD675
VCEO
Collector-emitter voltage BD677
BD679
VEBO IC ICM IB PC
Emitter -base voltage Collector current Collector current-Peak Base current Collector power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS Open emitter Open base Open collector
TC=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
Thermal resistance from junction to ambient
Rth j-mb
Thermal resistance from junction to mounting base
VALUE 45 60 80 45 60 80 5 4 7 0.1 40 150
-55~150
UNIT
V
V
V A A A W
VALUE 100 3.12
UNIT K/W K/W
SavantIC Semiconductor
Silicon
NPN Darligton Power
Transistors
Product Specification
BD675/BD677/BD679
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO
Collector-emitter breakdown voltage
BD675 BD677 IC=100mA; IB=0 BD679
V(BR)CBO
Collector-base breakdown voltage
BD675 BD677 IC=1mA; IE=0 BD679
V(BR)EBO Emitter-base breakdown voltage
IE=5mA; IC=0
VCEsat Collector-emitter saturation voltage IC=1.5A; IB=30mA
VBE(on)...