BD677

SavantIC Semiconductor Silicon NPN Darligton Power Transistors Product Specification BD675/BD677/BD679 DESCRIPTION ·With TO-126 package ·Complement to type BD676/678/680 ·DARLINGTON ·High DC current gain APPLICATIONS ·For use as output devices in complementary general–purpose amplifier applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER BD675 VCBO Collector-base voltage BD677 BD679 BD675 VCEO Collector-emitter voltage BD677 BD679 VEBO IC ICM IB PC Emitter -base voltage Collector current Collector current-Peak Base current Collector power dissipation Tj Junction temperature Tstg Storage temperature CONDITIONS Open emitter Open base Open collector TC=25 THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-a Thermal resistance from junction to ambient Rth j-mb Thermal resistance from junction to mounting base VALUE 45 60 80 45 60 80 5 4 7 0.1 40 150 -55~150 UNIT V V V A A A W VALUE 100 3.12 UNIT K/W K/W SavantIC Semiconductor Silicon NPN Darligton Power Transistors Product Specification BD675/BD677/BD679 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-emitter breakdown voltage BD675 BD677 IC=100mA; IB=0 BD679 V(BR)CBO Collector-base breakdown voltage BD675 BD677 IC=1mA; IE=0 BD679 V(BR)EBO Emitter-base breakdown voltage IE=5mA; IC=0 VCEsat Collector-emitter saturation voltage IC=1.5A; IB=30mA VBE(on)...