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BU806 BU807
NPN SILICON DARLINGTON TRANSISTOR
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DESCRIPTION: The CENTRAL SEMICONDUCTOR BU806 and BU807 types are NPN Silicon Darlington Transistors designed for high voltage, high current, fast switching applications.
MARKING: FULL PART NUMBER
TO-220 CASE
MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Continuous Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance Thermal Resistance
SYMBOL VCBO VCEV VCEO VEBO IC ICM IB PD TJ, Tstg
ΘJA ΘJC
BU806 400
BU807 330
400 330
200 150
6.0
8.0
15
2.0
60
-65 to +150
70
2.08
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
ICES
VCE=400V (BU806)
ICES
VCE=330V (BU807)
ICEV
VCE=400V, VEB=6.0V (BU806)
ICEV
VCE=330V, VEB=6.0V (BU807)
IEBO
VEB=6.0V
BVCEO
IC=100mA (BU806)
200
BVCEO
IC=100mA (BU807)
150
VCE(SAT) IC=5.0A, IB=50mA
VBE(SAT) IC=5.0A, IB=50mA
VF IF=4.0A
ton VCC=100V, IC=5.0A, IB1=50mA, IB2=500mA
toff VCC=100V, IC=5.0A, IB1=50mA, IB2=500mA
TYP
0.35 0.4
MAX 100 100 100 100 3.5
1.5 2.4 2.0
1.0
UNITS V V V V A A A W °C
°C/W °C/W
UNITS μA μA μA μA mA V V V V V μs μs
R0 (4-August 2011)
BU806 BU807 NPN SILICON DARLINGTON TRANSISTOR
TO-220 CASE - MECHANICAL OUTLINE
LEAD CODE: 1) Base 2) Collector 3) Emitter Tab) Collector MARKING: FULL PART NUMBER
w w w. c e n t r a l s e m i . c o m
R0 (4-August 2011)
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