BU806

TIGER ELECTRONIC CO.,LTD MEDIUM Voltage & Fast Switching DarlingtonTransistor Product specification BU806 DESCRIPTION The devices are silicon Epitaxial Planar NPN power transistors in Darlington configuration with integrated base-emitter speed-up diode, mounted in TO-220 plastic package. They can be used in horizontal output stages of 110 oCRT video displays. Absolute Maximum Ratings ( Ta = 25℃ ) Parameter l Value Unit Collector-Base Voltage VCBO 400 V Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Total Dissipation at Max. Operating Junction Temperature Storage Temperature VCEO VEBO IC IB Ptot Tj Tstg 200 V 6V 8.0 A 2.0 A 60 W 150 oC -55~150 oC TO-220 Electrical Characteristics ( Ta = 25℃ ) Parameter Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Sustaining Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Damper Diode Forward Voltage Storage Time Symbol Test Conditions ICES VCE=400V, VBEO=0 IEBO VEB=6V, IC=0 VCEO IC=100mA, IB=0 hFE(1) VCE=5V, IC=5.0A VCE(sat) IC=5.0A,IB=50mA VBE(sat) IC=5.0A,IB=50mA VF IF=4.0A TS IC=5A, IB=0.5A Min. — — 200 200 — — — — Typ. — — — — — — — 0.55 Max. Unit 100 uA 3.5 mA —V — 1.5 V 2.4 V 2V — us ...