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CJD122 Dataheets PDF



Part Number CJD122
Manufacturers Central Semiconductor
Logo Central Semiconductor
Description POWER DARLINGTON TRANSISTORS
Datasheet CJD122 DatasheetCJD122 Datasheet (PDF)

CJD122 NPN CJD127 PNP SURFACE MOUNT SILICON COMPLEMENTARY POWER DARLINGTON TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CJD122 and CJD127 are complementary silicon power Darlington transistors manufactured in a surface mount package designed for low speed switching and amplifier applications. MARKING: FULL PART NUMBER DPAK CASE MAXIMUM RATINGS: (TC=25°C unless otherwise noted) SYMBOL Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO Emi.

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CJD122 NPN CJD127 PNP SURFACE MOUNT SILICON COMPLEMENTARY POWER DARLINGTON TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CJD122 and CJD127 are complementary silicon power Darlington transistors manufactured in a surface mount package designed for low speed switching and amplifier applications. MARKING: FULL PART NUMBER DPAK CASE MAXIMUM RATINGS: (TC=25°C unless otherwise noted) SYMBOL Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO Emitter-Base Voltage VEBO Continuous Collector Current IC Peak Collector Current ICM Continuous Base Current IB Power Dissipation PD Power Dissipation (TA=25°C) PD Operating and Storage Junction Temperature TJ, Tstg Thermal Resistance ΘJC Thermal Resistance ΘJA 100 100 5.0 8.0 16 120 20 1.75 -65 to +150 6.25 71.4 ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICEO VCE=50V ICEV VCE=100V, VBE(off)=1.5V ICEV VCE=100V, VBE(off)=1.5V, TC=125°C ICBO VCB=100V IEBO VEB=5.0V BVCEO IC=30mA 100 VCE(SAT) IC=4.0A, IB=16mA VCE(SAT) IC=8.0A, IB=80mA VBE(SAT) IC=8.0A, IB=80mA VBE(ON) VCE=4.0V, IC=4.0A hFE VCE=4.0V, IC=4.0A 1000 hFE VCE=4.0V, IC=8.0A 100 fT VCE=4.0V, IC=3.0A, f=1.0MHz 4.0 Cob VCB=10V, IE=0, f=1.0MHz (CJD122) Cob VCB=10V, IE=0, f=1.0MHz (CJD127) hfe VCE=4.0V, IC=3.0A, f=1.0kHz MAX 10 10 500 10 2.0 2.0 4.0 4.5 2.8 12000 200 300 300 UNITS V V V A A mA W W °C °C/W °C/W UNITS μA μA μA μA mA V V V V V MHz pF pF R3 (21-January 2013) CJD122 NPN CJD127 PNP SURFACE MOUNT SILICON COMPLEMENTARY POWER DARLINGTON TRANSISTORS DPAK CASE - MECHANICAL OUTLINE LEAD CODE: 1) Base 2) Collector 3) Emitter 4) Collector MARKING: FULL PART NUMBER w w w. c e n t r a l s e m i . c o m R3 (21-January 2013) .


CEN-U95 CJD122 CJD127


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