Document
CJD122 NPN CJD127 PNP
SURFACE MOUNT SILICON COMPLEMENTARY
POWER DARLINGTON TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR CJD122 and CJD127 are complementary silicon power Darlington transistors manufactured in a surface mount package designed for low speed switching and amplifier applications.
MARKING: FULL PART NUMBER
DPAK CASE
MAXIMUM RATINGS: (TC=25°C unless otherwise noted) SYMBOL
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Continuous Collector Current
IC
Peak Collector Current
ICM
Continuous Base Current
IB
Power Dissipation
PD
Power Dissipation (TA=25°C)
PD
Operating and Storage Junction Temperature
TJ, Tstg
Thermal Resistance
ΘJC
Thermal Resistance
ΘJA
100 100 5.0 8.0 16 120 20 1.75 -65 to +150 6.25 71.4
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
ICEO
VCE=50V
ICEV
VCE=100V, VBE(off)=1.5V
ICEV
VCE=100V, VBE(off)=1.5V, TC=125°C
ICBO
VCB=100V
IEBO
VEB=5.0V
BVCEO
IC=30mA
100
VCE(SAT) IC=4.0A, IB=16mA
VCE(SAT) IC=8.0A, IB=80mA
VBE(SAT) IC=8.0A, IB=80mA
VBE(ON)
VCE=4.0V, IC=4.0A
hFE VCE=4.0V, IC=4.0A
1000
hFE VCE=4.0V, IC=8.0A
100
fT
VCE=4.0V, IC=3.0A, f=1.0MHz
4.0
Cob VCB=10V, IE=0, f=1.0MHz (CJD122)
Cob VCB=10V, IE=0, f=1.0MHz (CJD127)
hfe VCE=4.0V, IC=3.0A, f=1.0kHz
MAX 10 10 500 10 2.0
2.0 4.0 4.5 2.8 12000
200 300 300
UNITS V V V A A mA W W °C
°C/W °C/W
UNITS μA μA μA μA mA V V V V V
MHz pF pF
R3 (21-January 2013)
CJD122 NPN CJD127 PNP SURFACE MOUNT SILICON COMPLEMENTARY POWER DARLINGTON TRANSISTORS
DPAK CASE - MECHANICAL OUTLINE
LEAD CODE: 1) Base 2) Collector 3) Emitter 4) Collector MARKING: FULL PART NUMBER
w w w. c e n t r a l s e m i . c o m
R3 (21-January 2013)
.