Document
STU102S
SamHop Microelectronics Corp.
STD102SGreen
Product
Ver 1.0
N-Channel Logic Level Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
VDSS
ID RDS(ON) (mΩ) Max
566 @ VGS=10V
100V
6A
734 @ VGS=4.5V
FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. TO-252 and TO-251 Package.
G S
STU SERIES TO-252AA(D-PAK)
G DS
STD SERIES TO-251(I-PAK)
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)
Symbol Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID
Drain Current-Continuous a c
TC=25°C
TC=70°C
IDM -Pulsed c
EAS Single Pulse Avalanche Energy d
PD
Maximum Power Dissipation a
TC=25°C
TC=70°C
TJ, TSTG
Operating Junction and Storage Temperature Range
THERMAL CHARACTERISTICS
R JC
Thermal Resistance, Junction-to-Case a
R JA
Thermal Resistance, Junction-to-Ambient a
Limit 100 ±20
6 4.8 17 2 42 27 -55 to 150
3 50
Units V V A A A mJ W W °C
°C/W °C/W
Details are subject to change without notice.
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STU102S STD102S
Ver 1.0
ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)
Symbol Parameter
Conditions
OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Body Leakage Current
VGS=0V , ID=250uA VDS=80V , VGS=0V VGS= ±20V , VDS=0V
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
RDS(ON) Drain-Source On-State Resistance
gFS Forward Transconductance
DYNAMIC CHARACTERISTICS b
CISS Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS b
tD(ON)
Turn-On Delay Time
tr Rise Time
tD(OFF)
Turn-Off Delay Time
tf Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=VGS , ID=250uA VGS=10V , ID=3A VGS=4.5V , ID=2.7A VDS=10V , ID=3A
VDS=25V,VGS=0V f=1.0MHz
VDD=50V ID=1A VGS=10V RGEN= 6 ohm VDS=50V,ID=3A,VGS=10V VDS=50V,ID=3A, VGS=10V
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VSD Diode Forward Voltage
VGS=0V,IS=1A
Notes
a.Surface Mounted on FR4 Board of 1 inch2 , 1oz.
b.Guaranteed by design, not subject to production testing.
c.Drain current limited by maximum junction temperature. d.Starting TJ=25°C,L=0.5mH,VDD = 50V.(See Figure13)
Min Typ Max Units
100 V 1 uA
±100 nA
1 2.1 3
V
453 566 m ohm
544 734 m ohm
6.4 S
170 pF 22 pF 14 pF
6.6 ns 10 ns 14 ns 2 ns 3.5 nC 0.72 nC 1.4 nC
0.81 1.3
V
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RDS(on)(m Ω)
ID, Drain Current(A)
STU102S STD102S
4.0 VGS=10V VGS=4.5V
3.2 VGS=V4V
2.4
1.6 VGS=3.5V
0.8
0 0 0.5 1 1.5 2 2.5 3
VDS, Drain-to-Source Voltage(V)
Figure 1. Output Characteristics
1200
1000
800
600 V GS =4.5V 400
V GS =10V 200
0 0.01 0.8 1.6 2.4 3.2 4.0
ID, Drain Current(A)
Figure 3. On-Resistance vs. Drain Current and Gate Voltage
RDS(on), On-Resistance Normalized
ID, Drain Current(A)
Ver 1.0
4.0
3.2
2.4 Tj=125 C
1.6 25 C -55 C
0.8
0 0 0.8 1.6 2.4 3.2 4.0 4.8
VGS, Gate-to-Source Voltage(V)
Figure 2. Transfer Characteristics
2.5
2.2 V G S =10V
1.9 ID=3A
1.6
1.3 V G S =4.5V I D =2 . 7 A
1.0
0 0 25 50 75 100 125 150 Tj(°C )
Tj, Junction Temperature(°C )
Figure 4. On-Resistance Variation with Drain Current and Temperature
Vth, Normalized Gate-Source Threshold Voltage
1.6
1.4
V DS =V G S ID=250uA
1.2
1.0
0.8
0.6
0.4
0.2 -50 -25 0 25 50 75 100 125 150 Tj, Junction Temperature(°C )
Figure 5. Gate Threshold Variation with Temperature
BVDSS, Normalized Drain-Source Breakdown Voltage
1.15 ID=250uA
1.10
1.05
1.00
0.95
0.90
0.85 -50 -25 0 25 50 75 100 125 150 Tj, Junction Temperature(°C )
Figure 6. Breakdown Voltage Variation with Temperature
Jun,09,2014
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STU102S STD102S
RDS(on)(m Ω )
1800 1500
ID=3A
1200 900 600 300
125 C 75 C 25 C
0 0 2 4 6 8 10
VGS, Gate-to-Source Voltage(V)
Figure 7. On-Resistance vs. Gate-Source Voltage
240
200 Ciss
160
120 Coss 80 Crss 40
0 0 5 10 15 20 25 30
VDS, Drain-to-Source Voltage(V)
Figure 9. Capacitance
C, Capacitance(pF)
VGS, Gate to Source Voltage(V)
Is, Source-drain current(A)
Ver 1.0
20 10
75 C
125 C
25 C
1 0 0.3 0.6 0.9 1.2 1.5
VSD, Body Diode Forward Voltage(V)
Figure 8. Body Diode Forward Voltage Variation with Source Current
10
VDS=50V
8
ID=3A
6
4
2
0 01 234
Qg, Total Gate Charge(nC)
Figure 10. Gate Charge
Switching Time(ns)
100
TD(off )
10 Tr
TD(on)
Tf
1
0.1 1
VDS=50V,ID=1A VGS=10V
10
Rg, Gate Resistance(Ω )
100
Figure 11. switching characteristics
ID, Drain Current(A)
10
RDS(ON) Limit
1ms100us D1C0ms
1
0.1
VGS=10V Single Pulse
TC=25 C
0.01
0.1 1
10 100
VDS, Drain-Source Voltage(V)
Figure 12. Maximum Safe Operating Area
Jun,09,2014
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STU102S STD102S
Ver 1.0
VDS
L
RG
20V
tp
D.U.T IAS
0.01
+
- VDD
Uncamped Inductive Test Circuit Figure 13a.
V(BR)DSS tp
IAS
Unclamped Inductive Waveforms Figure 13b.
Normalized Transient Thermal Resistance
2
1 D=0.5
0.2
0.1 0.1 0.05
0.02
P DM
t1 t2
0.01
1. R JA(t)=r(t)*R JA
2. R JA=See Datasheet
SINGLE PULSE
3. TJM-TA=PDM*R JA(t)
4. Duty Cycle.