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STU102S Dataheets PDF



Part Number STU102S
Manufacturers SamHop Microelectronics
Logo SamHop Microelectronics
Description N-Channel MOSFET
Datasheet STU102S DatasheetSTU102S Datasheet (PDF)

STU102S SamHop Microelectronics Corp. STD102SGreen Product Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor PRODUCT SUMMARY VDSS ID RDS(ON) (mΩ) Max 566 @ VGS=10V 100V 6A 734 @ VGS=4.5V FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. TO-252 and TO-251 Package. G S STU SERIES TO-252AA(D-PAK) G DS STD SERIES TO-251(I-PAK) ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted) Symbol Parameter VDS Drain-Source Voltage VGS Gate-So.

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STU102S SamHop Microelectronics Corp. STD102SGreen Product Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor PRODUCT SUMMARY VDSS ID RDS(ON) (mΩ) Max 566 @ VGS=10V 100V 6A 734 @ VGS=4.5V FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. TO-252 and TO-251 Package. G S STU SERIES TO-252AA(D-PAK) G DS STD SERIES TO-251(I-PAK) ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID Drain Current-Continuous a c TC=25°C TC=70°C IDM -Pulsed c EAS Single Pulse Avalanche Energy d PD Maximum Power Dissipation a TC=25°C TC=70°C TJ, TSTG Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JC Thermal Resistance, Junction-to-Case a R JA Thermal Resistance, Junction-to-Ambient a Limit 100 ±20 6 4.8 17 2 42 27 -55 to 150 3 50 Units V V A A A mJ W W °C °C/W °C/W Details are subject to change without notice. 1 Jun,09,2014 www.samhop.com.tw STU102S STD102S Ver 1.0 ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted) Symbol Parameter Conditions OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Body Leakage Current VGS=0V , ID=250uA VDS=80V , VGS=0V VGS= ±20V , VDS=0V ON CHARACTERISTICS VGS(th) Gate Threshold Voltage RDS(ON) Drain-Source On-State Resistance gFS Forward Transconductance DYNAMIC CHARACTERISTICS b CISS Input Capacitance COSS Output Capacitance CRSS Reverse Transfer Capacitance SWITCHING CHARACTERISTICS b tD(ON) Turn-On Delay Time tr Rise Time tD(OFF) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS=VGS , ID=250uA VGS=10V , ID=3A VGS=4.5V , ID=2.7A VDS=10V , ID=3A VDS=25V,VGS=0V f=1.0MHz VDD=50V ID=1A VGS=10V RGEN= 6 ohm VDS=50V,ID=3A,VGS=10V VDS=50V,ID=3A, VGS=10V DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS VSD Diode Forward Voltage VGS=0V,IS=1A Notes a.Surface Mounted on FR4 Board of 1 inch2 , 1oz. b.Guaranteed by design, not subject to production testing. c.Drain current limited by maximum junction temperature. d.Starting TJ=25°C,L=0.5mH,VDD = 50V.(See Figure13) Min Typ Max Units 100 V 1 uA ±100 nA 1 2.1 3 V 453 566 m ohm 544 734 m ohm 6.4 S 170 pF 22 pF 14 pF 6.6 ns 10 ns 14 ns 2 ns 3.5 nC 0.72 nC 1.4 nC 0.81 1.3 V Jun,09,2014 2 www.samhop.com.tw RDS(on)(m Ω) ID, Drain Current(A) STU102S STD102S 4.0 VGS=10V VGS=4.5V 3.2 VGS=V4V 2.4 1.6 VGS=3.5V 0.8 0 0 0.5 1 1.5 2 2.5 3 VDS, Drain-to-Source Voltage(V) Figure 1. Output Characteristics 1200 1000 800 600 V GS =4.5V 400 V GS =10V 200 0 0.01 0.8 1.6 2.4 3.2 4.0 ID, Drain Current(A) Figure 3. On-Resistance vs. Drain Current and Gate Voltage RDS(on), On-Resistance Normalized ID, Drain Current(A) Ver 1.0 4.0 3.2 2.4 Tj=125 C 1.6 25 C -55 C 0.8 0 0 0.8 1.6 2.4 3.2 4.0 4.8 VGS, Gate-to-Source Voltage(V) Figure 2. Transfer Characteristics 2.5 2.2 V G S =10V 1.9 ID=3A 1.6 1.3 V G S =4.5V I D =2 . 7 A 1.0 0 0 25 50 75 100 125 150 Tj(°C ) Tj, Junction Temperature(°C ) Figure 4. On-Resistance Variation with Drain Current and Temperature Vth, Normalized Gate-Source Threshold Voltage 1.6 1.4 V DS =V G S ID=250uA 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 0 25 50 75 100 125 150 Tj, Junction Temperature(°C ) Figure 5. Gate Threshold Variation with Temperature BVDSS, Normalized Drain-Source Breakdown Voltage 1.15 ID=250uA 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 Tj, Junction Temperature(°C ) Figure 6. Breakdown Voltage Variation with Temperature Jun,09,2014 3 www.samhop.com.tw STU102S STD102S RDS(on)(m Ω ) 1800 1500 ID=3A 1200 900 600 300 125 C 75 C 25 C 0 0 2 4 6 8 10 VGS, Gate-to-Source Voltage(V) Figure 7. On-Resistance vs. Gate-Source Voltage 240 200 Ciss 160 120 Coss 80 Crss 40 0 0 5 10 15 20 25 30 VDS, Drain-to-Source Voltage(V) Figure 9. Capacitance C, Capacitance(pF) VGS, Gate to Source Voltage(V) Is, Source-drain current(A) Ver 1.0 20 10 75 C 125 C 25 C 1 0 0.3 0.6 0.9 1.2 1.5 VSD, Body Diode Forward Voltage(V) Figure 8. Body Diode Forward Voltage Variation with Source Current 10 VDS=50V 8 ID=3A 6 4 2 0 01 234 Qg, Total Gate Charge(nC) Figure 10. Gate Charge Switching Time(ns) 100 TD(off ) 10 Tr TD(on) Tf 1 0.1 1 VDS=50V,ID=1A VGS=10V 10 Rg, Gate Resistance(Ω ) 100 Figure 11. switching characteristics ID, Drain Current(A) 10 RDS(ON) Limit 1ms100us D1C0ms 1 0.1 VGS=10V Single Pulse TC=25 C 0.01 0.1 1 10 100 VDS, Drain-Source Voltage(V) Figure 12. Maximum Safe Operating Area Jun,09,2014 4 www.samhop.com.tw STU102S STD102S Ver 1.0 VDS L RG 20V tp D.U.T IAS 0.01 + - VDD Uncamped Inductive Test Circuit Figure 13a. V(BR)DSS tp IAS Unclamped Inductive Waveforms Figure 13b. Normalized Transient Thermal Resistance 2 1 D=0.5 0.2 0.1 0.1 0.05 0.02 P DM t1 t2 0.01 1. R JA(t)=r(t)*R JA 2. R JA=See Datasheet SINGLE PULSE 3. TJM-TA=PDM*R JA(t) 4. Duty Cycle.


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