Silicon Super Fast Recovery Diode
Silicon Super Fast Recovery Diode
Features • High Surge Capability • Types from 50 V to 600 V VRRM • Non Isolated to pla...
Description
Silicon Super Fast Recovery Diode
Features High Surge Capability Types from 50 V to 600 V VRRM Non Isolated to plate Not ESD Sensitive
UFT10005 thru UFT10060
VRRM = 50 V - 600 V IF(AV) = 100 A
TO-249AB Package
Maximum ratings, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
UFT10005 UFT10010 UFT10020 UFT10040 UFT10060 Unit
Repetitive peak reverse voltage
RMS reverse voltage DC blocking voltage Operating temperature Storage temperature
VRRM
VRMS VDC Tj Tstg
50 100 200 400 600
35 50 -55 to 150 -55 to 150
70 100 -55 to 150 -55 to 150
140 200 -55 to 150 -55 to 150
280 400 -55 to 150 -55 to 150
420 600 -55 to 150 -55 to 150
V
V V °C °C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
UFT10005 UFT10010 UFT10020 UFT10040 UFT10060 Unit
Average forward current (per pkg)
Peak forward surge current (per leg)
Maximum instantaneous forward voltage (per leg)
Maximum reverse current at rated DC blocking voltage (per leg)
Maximum reverse recovery time (per leg)
Thermal characteristics
Maximum thermal resistance, junction - case (per leg)
IF(AV) IFSM VF IR Trr
RΘJC
TC ≤ 125 °C
tp = 8.3 ms, half sine
IF = 50 A, Tj = 25 °C
Tj = 25 °C Tj = 125 °C IF=0.5 A, IR=1.0 A, IRR= 0.25 A
100 1000 1.0
25 3 60
1.0
100 1000 1.0
25 3 60
1.0
100 1000 1.0
25 3 60
1.0
100 1000 1.3
25 3 70
1.0
100 1000
1.7 25 3 90
A A
V μA mA ns
1.0 °C/W
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