Gre Pro
STU/D35L01HA
Sa mHop Microelectronics C orp.
N-Channel Logic Level Enhancement Mode Field Effect Transistor
V...
Gre Pro
STU/D35L01HA
Sa mHop Microelectronics C orp.
N-Channel Logic Level Enhancement Mode Field Effect
Transistor
Ver 1.0
PRODUCT SUMMARY
VDSS
ID RDS(ON) (mΩ) Typ
100V
35A
20 @ VGS=10V
FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. TO-252 and TO-251 Package.
G S
STU SERIES TO - 252AA( D- PAK )
G DS
STD SERIES TO - 251( I - PAK )
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)
Symbol Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID
Drain Current-Continuous a
TC=25°C TC=70°C
IDM -Pulsed b
EAS Single Pulse Avalanche Energy d
PD
Maximum Power Dissipation a
TC=25°C TC=70°C
TJ, TSTG
Operating Junction and Storage Temperature Range
THERMAL CHARACTERISTICS
R JC
Thermal Resistance, Junction-to-Case a
R JA
Thermal Resistance, Junction-to-Ambient a
Limit 100 ±20 35 29 92 156 60 42
-55 to 175
2.5 50
Units V V A A A mJ W W °C
°C/W °C/W
Details are subject to change without notice.
1
Mar,30,2011
www.samhop.com.tw
STU/D35L01HA
Ver 1.0
ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min Typ Max Units
OFF CHARACTERISTICS
BVDSS BVDSS
Drain-Source Breakdown Voltage Drain-Source Breakdown Voltage e
IDSS Zero Gate Voltage Drain Current
IGSS Gate-Body Leakage Current
VGS=0V , ID=250uA VGS=0V , ID=10mA VDS=80V , VGS=0V VGS= ±20V , VDS=0V
100 V 110 V
1 uA ±100 nA
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
RDS(ON) gFS
Drain-Source On-State Resistan...