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MDP12N50F Dataheets PDF



Part Number MDP12N50F
Manufacturers MagnaChip
Logo MagnaChip
Description N-Channel MOSFET
Datasheet MDP12N50F DatasheetMDP12N50F Datasheet (PDF)

MDP12N50F/MDF12N50F N-channel MOSFET 500V MDP12N50F/MDF12N50F N-Channel MOSFET 500V, 11.5A, 0.7Ω General Description These N-channel MOSFET are produced using advanced MagnaChip’s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality. These devices are suitable device for SMPS, high Speed switching and general purpose applications. Features  VDS = 500V  ID = 11.5A  RDS(ON) ≤ 0.7Ω @ VGS = 10V @ VGS = 10V Applications  Power Supply  PF.

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MDP12N50F/MDF12N50F N-channel MOSFET 500V MDP12N50F/MDF12N50F N-Channel MOSFET 500V, 11.5A, 0.7Ω General Description These N-channel MOSFET are produced using advanced MagnaChip’s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality. These devices are suitable device for SMPS, high Speed switching and general purpose applications. Features  VDS = 500V  ID = 11.5A  RDS(ON) ≤ 0.7Ω @ VGS = 10V @ VGS = 10V Applications  Power Supply  PFC  High Current, High Speed Switching D TO-220 MDP Series TO-220F MDF Series Absolute Maximum Ratings (Ta = 25oC) Characteristics Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current(1) Power Dissipation Repetitive Avalanche Energy(1) Peak Diode Recovery dv/dt(3) Single Pulse Avalanche Energy(4) TC=25oC TC=100oC TC=25oC Derate above 25 oC Junction and Storage Temperature Range * Id limited by maximum junction temperature G S` Symbol VDSS VGSS ID IDM PD EAR dv/dt EAS TJ, Tstg MDP12N50 MDF12N50 500 ±30 .11.5 11.5* 7.0 7.0* 46 46* 165 42 1.33 0.32 16.5 4.5 460 -55~150 Unit V V A A A W W/ oC mJ V/ns mJ oC Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient(1) Thermal Resistance, Junction-to-Case(1) Symbol RθJA RθJC MDP12N50 62.5 0.75 MDF12N50 62.5 3.0 Unit oC/W Dec. 2014 Version 1.4 1 MagnaChip Semiconductor Ltd. MDP12N50F/MDF12N50F N-channel MOSFET 500V Ordering Information Part Number MDP12N50FTH MDF12N50FTH Temp. Range -55~150oC -55~150oC Package TO-220 TO-220F Packing Tube Tube RoHS Status Halogen Free Halogen Free Electrical Characteristics (Ta =25oC) Characteristics Symbol Static Characteristics Drain-Source Breakdown Voltage Gate Threshold Voltage Drain Cut-Off Current Gate Leakage Current Drain-Source ON Resistance Forward Transconductance Dynamic Characteristics BVDSS VGS(th) IDSS IGSS RDS(ON) gfs Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Input Capacitance Ciss Reverse Transfer Capacitance Crss Output Capacitance Coss Turn-On Delay Time td(on) Rise Time tr Turn-Off Delay Time td(off) Fall Time tf Drain-Source Body Diode Characteristics Maximum Continuous Drain to Source Diode Forward Current Source-Drain Diode Forward Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IS VSD trr Qrr Test Condition ID = 250μA, VGS = 0V VDS = VGS, ID = 250μA VDS = 500V, VGS = 0V VGS = ±30V, VDS = 0V VGS = 10V, ID = 5.75A VDS = 30V, ID = 5.75A VDS = 400V, ID = 11.5A, VGS = 10V(3) VDS = 25V, VGS = 0V, f = 1.0MHz VGS = 10V, VDS = 250V, ID = 11.5A, RG = 25Ω(3) IS = 11.5A, VGS = 0V IF = 11.5A, dl/dt = 100A/μs(3) Note : 1. Pulse width is based on RθJC & RθJA and the maximum allowed junction temperature of 150°C. 2. Pulse test: pulse width ≤300us, duty cycle≤2%, pulse width limited by junction temperature TJ(MAX)=150°C. 3. ISD ≤11.5A, di/dt≤200A/us, VDD=50V, Rg =25Ω, Starting TJ=25°C 4. L=6.3mH, IAS=11.5A, VDD=50V, Rg =25Ω, Starting TJ=25°C, Min Typ Max Unit 500 2.5 - -- V 4.5 10 μA - - 100 nA 0.59 0.7 Ω -5 -S - 20 26 - 7.0 - nC - 7.5 - - 1010 1300 - 2.7 4.0 pF - 125 165 - 47 100 - 35 80 ns - 55 120 - 28 60 - 11.5 - A - 1.4 V - 100 - 2.61 ns μC Dec. 2014 Version 1.4 2 MagnaChip Semiconductor Ltd. ID,Drain Current [A] MDP12N50F/MDF12N50F N-channel MOSFET 500V 12 11 Vgs=5.5V =6.0V 10 =6.5V =7.0V 9 =8.0V 8 =10.0V =15.0V 7 6 5 4 3 2 1 Notes 1. 250㎲ Pulse Test 2. T =25℃ C 5 10 15 VDS,Drain-Source Voltage [V] Fig.1 On-Region Characteristics 20 3.0 ※ Notes : 1. V = 10 V 2.5 GS 2. ID = 5.75A 2.0 1.5 1.0 0.5 0.0 -50 0 50 100 150 TJ, Junction Temperature [oC] Fig.3 On-Resistance Variation with Temperature 200 BVDSS, (Normalized) Drain-Source Breakdown Voltage DS(ON)R [Ω ] 1.2 1.0 VGS=10.0V 0.8 VGS=20V 0.6 0 5 10 15 ID,Drain Current [A] Fig.2 On-Resistance Variation with Drain Current and Gate Voltage 20 1.2 ※ Notes : 1. V = 0 V GS 2. I = 250㎂ D 1.1 1.0 0.9 0.8 -50 0 50 100 150 T , Junction Temperature [oC] J 200 Fig.4 Breakdown Voltage Variation vs. Temperature RDS(ON), (Normalized) Drain-Source On-Resistance IDR Reverse Drain Current [A] * Notes ; 1. Vds=30V 10 150℃ 25℃ -55℃ ※ Notes : 1. V = 0 V GS 2.250s Pulse test 10 150℃ 25℃ ID(A) 1 2468 VGS [V] Fig.5 Transfer Characteristics 10 Dec. 2014 Version 1.4 3 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VSD, Source-Drain Voltage [V] Fig.6 Body Diode Forward Voltage Variation with Source Current and Temperature MagnaChip Semiconductor Ltd. VGS, Gate-Source Voltage [V] MDP12N50F/MDF12N50F N-channel MOSFET 500V 10 ※ Note : I = 11.5A D 8 6 100V 250V 400V 4 2 0 0 5 10 15 20 QG, Total Gate Charge [nC] Fig.7 Gate Charge Characteristics 25 102 Operation in This Area is Limited by R DS(on) 101 100 10s 100 s 1 ms 10 ms DC 100 ms 10-1 Single Pulse T =Max rated J TC=25℃ 10-2 10-1 100 101 102 VDS, Drain-Source Voltage [V] Fig.9 Maximum Safe Operating Area MDP12N5.


RS07M MDP12N50F MDF12N50F


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