Document
MDP12N50F/MDF12N50F N-channel MOSFET 500V
MDP12N50F/MDF12N50F
N-Channel MOSFET 500V, 11.5A, 0.7Ω
General Description
These N-channel MOSFET are produced using advanced MagnaChip’s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality.
These devices are suitable device for SMPS, high Speed switching and general purpose applications.
Features
VDS = 500V ID = 11.5A RDS(ON) ≤ 0.7Ω
@ VGS = 10V @ VGS = 10V
Applications
Power Supply PFC High Current, High Speed Switching
D
TO-220 MDP Series
TO-220F MDF Series
Absolute Maximum Ratings (Ta = 25oC)
Characteristics
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current Pulsed Drain Current(1)
Power Dissipation Repetitive Avalanche Energy(1) Peak Diode Recovery dv/dt(3) Single Pulse Avalanche Energy(4)
TC=25oC TC=100oC
TC=25oC Derate above 25 oC
Junction and Storage Temperature Range * Id limited by maximum junction temperature
G
S`
Symbol VDSS VGSS
ID
IDM
PD
EAR dv/dt EAS TJ, Tstg
MDP12N50 MDF12N50
500
±30
.11.5
11.5*
7.0 7.0*
46 46*
165 42
1.33 0.32
16.5
4.5
460
-55~150
Unit V V A A A
W W/ oC
mJ V/ns mJ oC
Thermal Characteristics
Characteristics Thermal Resistance, Junction-to-Ambient(1) Thermal Resistance, Junction-to-Case(1)
Symbol RθJA RθJC
MDP12N50 62.5 0.75
MDF12N50 62.5 3.0
Unit oC/W
Dec. 2014 Version 1.4
1 MagnaChip Semiconductor Ltd.
MDP12N50F/MDF12N50F N-channel MOSFET 500V
Ordering Information
Part Number MDP12N50FTH MDF12N50FTH
Temp. Range -55~150oC -55~150oC
Package TO-220 TO-220F
Packing Tube Tube
RoHS Status Halogen Free Halogen Free
Electrical Characteristics (Ta =25oC)
Characteristics
Symbol
Static Characteristics
Drain-Source Breakdown Voltage Gate Threshold Voltage Drain Cut-Off Current Gate Leakage Current Drain-Source ON Resistance Forward Transconductance Dynamic Characteristics
BVDSS VGS(th) IDSS IGSS RDS(ON)
gfs
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Input Capacitance
Ciss
Reverse Transfer Capacitance
Crss
Output Capacitance
Coss
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Drain-Source Body Diode Characteristics
Maximum Continuous Drain to Source Diode Forward Current
Source-Drain Diode Forward Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
IS VSD trr Qrr
Test Condition ID = 250μA, VGS = 0V VDS = VGS, ID = 250μA VDS = 500V, VGS = 0V VGS = ±30V, VDS = 0V VGS = 10V, ID = 5.75A VDS = 30V, ID = 5.75A
VDS = 400V, ID = 11.5A, VGS = 10V(3)
VDS = 25V, VGS = 0V, f = 1.0MHz
VGS = 10V, VDS = 250V, ID = 11.5A, RG = 25Ω(3)
IS = 11.5A, VGS = 0V IF = 11.5A, dl/dt = 100A/μs(3)
Note :
1. Pulse width is based on RθJC & RθJA and the maximum allowed junction temperature of 150°C. 2. Pulse test: pulse width ≤300us, duty cycle≤2%, pulse width limited by junction temperature TJ(MAX)=150°C.
3. ISD ≤11.5A, di/dt≤200A/us, VDD=50V, Rg =25Ω, Starting TJ=25°C
4. L=6.3mH, IAS=11.5A, VDD=50V, Rg =25Ω, Starting TJ=25°C,
Min Typ Max Unit
500 2.5 -
--
V
4.5
10 μA
- - 100 nA
0.59 0.7
Ω
-5
-S
- 20 26
- 7.0 - nC
- 7.5 -
- 1010 1300
- 2.7 4.0 pF
- 125 165
- 47 100
- 35 80 ns
- 55 120
- 28 60
- 11.5
-
A
- 1.4 V
- 100 - 2.61
ns μC
Dec. 2014 Version 1.4
2 MagnaChip Semiconductor Ltd.
ID,Drain Current [A]
MDP12N50F/MDF12N50F N-channel MOSFET 500V
12
11 Vgs=5.5V =6.0V
10 =6.5V =7.0V
9 =8.0V 8 =10.0V
=15.0V 7
6
5
4
3
2
1
Notes 1. 250㎲ Pulse Test 2. T =25℃
C
5 10 15
VDS,Drain-Source Voltage [V]
Fig.1 On-Region Characteristics
20
3.0
※ Notes :
1. V = 10 V
2.5
GS
2. ID = 5.75A
2.0
1.5
1.0
0.5
0.0 -50
0 50 100 150
TJ, Junction Temperature [oC]
Fig.3 On-Resistance Variation with Temperature
200
BVDSS, (Normalized) Drain-Source Breakdown Voltage
DS(ON)R [Ω ]
1.2
1.0
VGS=10.0V 0.8
VGS=20V
0.6
0 5 10 15
ID,Drain Current [A]
Fig.2 On-Resistance Variation with Drain Current and Gate Voltage
20
1.2
※ Notes : 1. V = 0 V
GS
2. I = 250㎂ D
1.1
1.0
0.9
0.8 -50
0 50 100 150
T , Junction Temperature [oC] J
200
Fig.4 Breakdown Voltage Variation vs. Temperature
RDS(ON), (Normalized) Drain-Source On-Resistance
IDR Reverse Drain Current [A]
* Notes ; 1. Vds=30V
10
150℃ 25℃
-55℃
※ Notes : 1. V = 0 V
GS
2.250s Pulse test
10
150℃
25℃
ID(A)
1 2468
VGS [V]
Fig.5 Transfer Characteristics
10
Dec. 2014 Version 1.4
3
1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
VSD, Source-Drain Voltage [V]
Fig.6 Body Diode Forward Voltage Variation with Source Current and Temperature
MagnaChip Semiconductor Ltd.
VGS, Gate-Source Voltage [V]
MDP12N50F/MDF12N50F N-channel MOSFET 500V
10 ※ Note : I = 11.5A
D
8
6
100V 250V
400V
4
2
0 0 5 10 15 20
QG, Total Gate Charge [nC]
Fig.7 Gate Charge Characteristics
25
102 Operation in This Area is Limited by R
DS(on)
101
100
10s
100 s 1 ms 10 ms DC 100 ms
10-1 Single Pulse T =Max rated
J
TC=25℃ 10-2
10-1 100 101 102
VDS, Drain-Source Voltage [V]
Fig.9 Maximum Safe Operating Area MDP12N5.