MDF12N50F

MDP12N50F/MDF12N50F N-channel MOSFET 500V MDP12N50F/MDF12N50F N-Channel MOSFET 500V, 11.5A, 0.7Ω General Description These N-channel MOSFET are produced using advanced MagnaChip’s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality. These devices are suitable device for SMPS, high Speed switching and general purpose applications. Features  VDS = 500V  ID = 11.5A  RDS(ON) ≤ 0.7Ω @ VGS = 10V @ VGS = 10V Applications  Power Supply  PFC  High Current, High Speed Switching D TO-220 MDP Series TO-220F MDF Series Absolute Maximum Ratings (Ta = 25oC) Characteristics Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current(1) Power Dissipation Repetitive Avalanche Energy(1) Peak Diode Recovery dv/dt(3) Single Pulse Avalanche Energy(4) TC=25oC TC=100oC TC=25oC Derate above 25 oC Junction and Storage Temperature Range * Id limited by maximum junction temperature G S` Symbol VDSS VGSS ID IDM PD EAR dv/dt EAS TJ, Tstg MDP12N50 MDF12N50 500 ±30 .11.5 11.5* 7.0 7.0* 46 46* 165 42 1.33 0.32 16.5 4.5 460 -55~150 Unit V V A A A W W/ oC mJ V/ns mJ oC Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient(1) Thermal Resistance, Junction-to-Case(1) Symbol RθJA RθJC MDP12N50 62.5 0.75 MDF12N50 62.5 3.0 Unit oC/W Dec. 2014 Version 1.4 1 MagnaChip Semiconductor Ltd. MDP12N50F/MDF12N50F N-channel MOSFET 500V Ordering Information Part Number MDP12...