TST20U100C

TST20U100C Taiwan Semiconductor Dual High-Voltage Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Low power loss/ high efficiency - High forward surge capability - Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition TO-220AB TYPICAL APPLICATIONS Trench Schottky barrier rectifier are designed for high frequency miniature switched mode power supplies such as adapters, lighting and on-board DC/DC converters. MECHANICAL DATA Case: TO-220AB Molding compound meets UL 94 V-0 flammability rating Packing code with suffix "G" means green compound (halogen-free) Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 1A whisker test Polarity: As marked Mounting torque: 0.56 Nm max. Weight: 1.88 g (approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) PARAMETER SYMBOL TST20U100C UNIT Maximum repetitive peak reverse voltage Maximum average forward rectified current per device per diode Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load per diode Instantaneous forward voltage per diode ( Note1 ) IF = 5A IF = 10A IF = 5A IF = 10A Instantaneous reverse current per diode at 100V Typical thermal resistance per diode TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C Operating junction temperature range Storage temperature...