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UF1K Dataheets PDF



Part Number UF1K
Manufacturers Taiwan Semiconductor
Logo Taiwan Semiconductor
Description Glass Passivated High Efficient Rectifiers
Datasheet UF1K DatasheetUF1K Datasheet (PDF)

UF1A thru UF1M Taiwan Semiconductor CREAT BY ART Glass Passivated High Efficient Rectifiers FEATURES - Glass passivated chip junction - Excellent high temperature switching - ldally suited for use in very high frequency switching power supplies, inverters and as free wheeling diodes - Ultrafast recovery time for high efficiency - Soft recovery characteristics - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition D.

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UF1A thru UF1M Taiwan Semiconductor CREAT BY ART Glass Passivated High Efficient Rectifiers FEATURES - Glass passivated chip junction - Excellent high temperature switching - ldally suited for use in very high frequency switching power supplies, inverters and as free wheeling diodes - Ultrafast recovery time for high efficiency - Soft recovery characteristics - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition DO-204AL (DO-41) MECHANICAL DATA Case: DO-204AL (DO-41) Molding compound, UL flammability classification rating 94V-0 Base P/N with suffix "G" on packing code - green compound (halogen-free) Base P/N with prefix "H" on packing code - AEC-Q101 qualified Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 1A whisker test, with prefix "H" on packing code meet JESD 201 class 2 whisker test Weight: 0.33g (approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERSTICS (TA=25℃ unless otherwise noted) PARAMETER SYMBOL UF1A UF1B UF1D UF1G UF1J UF1K UF1M Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current VRRM VRMS VDC IF(AV) 50 100 200 400 600 800 1000 35 70 140 280 420 560 700 50 100 200 400 600 800 1000 1 Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load IFSM 30 UNIT V V V A A Maximum instantaneous forward voltage (Note 1) @1A VF 1.0 1.7 V Maximum reverse current @ rated VR TJ=25 ℃ TJ=125 ℃ IR Maximum reverse recovery time (Note 2) Trr Typical junction capacitance (Note 3) Cj Typical thermal resistance RθJL RθJA Operating junction temperature range Storage temperature range Note 1: Pulse test with PW=300μs, 1% duty cycle TJ TSTG Note 2: Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C. 5 150 50 17 15 60 - 55 to +150 - 55 to +150 75 μA ns pF OC/W OC OC Document Number: DS_D1405072 Version: F14 CREAT BY ART ORDERING INFORMATION PART NO. AEC-Q101 PACKING CODE GREEN COMPOUND QUALIFIED A0 CODE UF1x (Note 1) Prefix "H" R0 R1 Suffix "G" B0 Note 1: "x" defines voltage from 50V (UF1A) to 1000V (UF1M) PACKAGE DO-41 DO-41 DO-41 DO-41 UF1A thru UF1M Taiwan Semiconductor PACKING 3,000 / Ammo box (52mm taping) 5,000 / 13" Paper reel 5,000 / 13" Paper reel (Reverse) 1,000 / Bulk packing EXAMPLE PREFERRED P/N UF1M A0 UF1M A0G UF1MHA0 PART NO. UF1M UF1M UF1M AEC-Q101 QUALIFIED H PACKING CODE A0 A0 A0 GREEN COMPOUND CODE G DESCRIPTION Green compound AEC-Q101 qualified RATINGS AND CHARACTERISTICS CURVES (TA=25℃ unless otherwise noted) FIG.1- MAXIMUM FORWARD CURRENT DERATING CURVE 1.0 RESISTIVE OR INDUCTIVE LOAD FIG. 2- TYPICAL FORWARD CHARACTERISTICS 10 UF1A-UF1G INSTANTANEOUS FORWARD CURRENT (A) AVERAGE FORWARD CURRENT (A) PEAK FORWARD SURGE CURRENT (A) 0.5 0.0 10 30 50 70 90 110 130 150 AMBIENT TEMPERATURE (oC) 30 25 20 15 10 5 0 1 FIG. 3- MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT 8.3ms Single Half Sine Wave 10 NUMBER OF CYCLES AT 60 Hz 100 INSTANTANEOUS REVERSE CURRENT (μA) 1 UF1J-UF1M PULSE WIDTH=300μs 1% DUTY CYCLE 0.1 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 FORWARD VOLTAGE (V) 1000 FIG. 4- TYPICAL REVERSE CHARACTERISTICS 100 TJ=125℃ 10 TJ=100℃ 1 0.1 TJ=25℃ 0.01 0 UF1A-UF1G UF1J-UF1M 20 40 60 80 100 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Document Number: DS_D1405072 Versioon: F14 JUNCTION CAPACITANCE (pF) CREAT BY ART FIG. 5- TYPICAL JUNCTION CAPACITANCE 100 UF1J-UF1M UF1A-UF1G 10 1 0.1 f=1.0MHz Vsig=50mVp-p 1 10 REVERSE VOLTAGE (V) 100 UF1A thru UF1M Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS DIM. A B C D E Unit (mm) Min Max 2.00 2.70 0.71 25.40 0.86 - 4.20 5.20 25.40 - Unit (inch) Min 0.079 Max 0.106 0.028 1.000 0.034 - 0.165 0.205 1.000 - MARKING DIAGRAM P/N = G= YWW = F= Specific Device Code Green Compound Date Code Factory Code Document Number: DS_D1405072 Version: F14 CREAT BY ART UF1A thru UF1M Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied,to any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or seling these product.


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