CMLT5087EM

CMLT5087EM SURFACE MOUNT SILICON DUAL, MATCHED PNP TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLT5087EM consists of two individual, isolated 5087E PNP silicon transistors with matched VBE(ON) characteristics. This device is designed for applications requiring high gain and low noise. MARKING CODE: L87 SOT-563 CASE Device is Halogen Free by design FEATURES: Transistor pair matched for VBE(ON) MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC PD TJ, Tstg ΘJA 50 50 5.0 100 350 -65 to +150 357 UNITS V V V mA mW °C °C/W ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP MAX ICBO IEBO BVCBO BVCEO BVEBO VCE(SAT) VCE(SAT) VBE(SAT) hFE hFE hFE hFE fT Cob Cib hfe NF VCB=20V VEB=3.0V IC=100μA IC=1.0mA IE=100μA IC=10mA, IB=1.0mA IC=100mA, IB=10mA IC=10mA, IB=1.0mA VCE=5.0V, IC=0.1mA VCE=5.0V, IC=1.0mA VCE=5.0V, IC=10mA VCE=5.0V, IC=100mA VCE=5.0V, IC=500μA, f=20MHz VCB=5.0V, IE=0, f=1.0MHz VBE=0.5V, IC=0, f=1.0MHz VCE=5.0V, IC=1.0mA, f=1.0kHz VCE=5.0V, IC=100μA, RS=10kΩ f=10Hz to 15.7kHz 50 50 5.0 300 300 300 50 100 350 50 50 150 105 7.5 50 100 225 400 700 800 390 900 380 350 75 4.0 15 1400 3.0 UNITS nA nA V V V mV mV mV MHz pF pF dB MATCHING CHARACTERISTICS: SYMBOL TEST CONDITIONS |VBE1...