CMLT8099

CMLT8099 SURFACE MOUNT SILICON DUAL NPN TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLT8099 consists of two individual, isolated 8099 NPN silicon transistors, manufactured by the epitaxial planar process and epoxy molded in an SOT-563 surface mount package. This device has been designed for small signal general purpose amplifier applications. MARKING CODE: C89 SOT-563 CASE APPLICATIONS: Small signal general purpose amplifiers FEATURES: Device is Halogen Free by design Current IC=500mA Voltage VCEO=80V MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continous Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC PD TJ, Tstg ΘJA 80 80 6.0 500 350 -65 to +150 357 ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX ICBO VCB=80V 0.1 IEBO VBE=6.0V 0.1 BVCBO IC=100μA 80 BVCEO IC=10mA 80 BVEBO IE=10μA 6.0 VCE(SAT) IC=100mA, IB=5.0mA 0.4 VCE(SAT) IC=100mA, IB=10mA 0.3 VBE(ON) VCE=5.0V, IC=10mA 0.6 0.8 hFE VCE=5.0V, IC=1.0mA 100 300 hFE VCE=5.0V, IC=10mA 100 hFE VCE=5.0V, IC=100mA 75 fT VCE=5.0V, IC=10mA, f=100MHz 150 Cob VCB=10V, IE=0, f=1.0MHz 6.0 Cib VBE=0.5V, IC=0, f=1.0MHz 25 UNITS V V V mA mW °C °C/W UNITS μA μA V V V V V V MHz pF pF R3 (29-June 2015) CMLT8099 SURFACE MOUNT SILICON DUAL NPN TRANSISTOR SOT-563 ...