CMPT2907AE

CMPT2907AE ENHANCED SPECIFICATION SURFACE MOUNT PNP SILICON TRANSISTOR SOT-23 CASE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT2907AE is an Enhanced version of the CMPT2907A PNP Switching transistor in a SOT-23 surface mount package, designed for switching applications, interface circuit and driver circuit applications. MARKING CODE: C2FE FEATURED ENHANCED SPECIFICATIONS: ♦ BVCBO from 60V min to 90V min. (115V TYP) ♦ VCE(SAT) from 1.6V max to 0.7V max. (0.280V TYP) ♦ hFE from 50 min to 75 min. (110 TYP) MAXIMUM RATINGS: (TA=25°C) ♦Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC PD TJ, Tstg ΘJA 90 60 5.0 600 350 -65 to +150 357 UNITS V V V mA mW °C °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP ICBO VCB=50V ICBO VCB=50V, TA=125°C ICEV ♦ BVCBO VCE=30V, VEB=0.5V IC=10µA 90 115 BVCEO IC=10mA 60 BVEBO ♦ VCE(SAT) ♦ VCE(SAT) IE=10µA IC=150mA, IB=15mA IC=500mA, IB=50mA 5.0 0.103 0.280 VBE(SAT) IC=150mA, IB=15mA VBE(SAT) IC=500mA, IB=50mA ♦ hFE VCE=10V, IC=0.1mA 100 205 hFE VCE=10V, IC=1.0mA 100 hFE VCE=10V, IC=10mA 100 hFE ♦ hFE VCE=10V, IC=150mA VCE=10V, IC=500mA 100 75 110 fT VCE=20V, IC=50mA, f=100MHz 200 Cob VCB=10V, IE=0, f=1.0MHz Cib VBE=2.0V, IC=0, f=1.0MHz ♦ Enhanced specification MAX 10 10 50 0.2 0...