CMPT5401E

CMPT5401E ENHANCED SPECIFICATION SURFACE MOUNT PNP SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT5401E is an PNP Silicon Transistor, packaged in an SOT-23 case, designed for general purpose amplifier applications requiring high breakdown voltage and small space saving packaging. MARKING CODE: C540 FEATURES: SOT-23 CASE High Collector Breakdown Voltage 250V Low Leakage Current 50nA Max APPLICATIONS: Low Saturation Voltage 150mV Max @ 50mA General purpose switching and amplification Complementary Device CMPT5551E Telephone applications SOT-23 Surface Mount Package MAXIMUM RATINGS: (TA=25°C) ♦ Collector-Base Voltage ♦ Collector-Emitter Voltage ♦ Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC PD TJ, Tstg ΘJA 250 220 7.0 600 350 -65 to +150 357 ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICBO ICBO IEBO ♦ BVCBO ♦ BVCEO ♦ ♦ BVEBO VCE(SAT) ♦ VCE(SAT) VBE(SAT) VBE(SAT) ♦ hFE ♦ hFE ♦ hFE ♦ hFE VCB=120V VCB=120V, TA=100°C VEB=3.0V IC=100µA IC=1.0mA IE=10µA IC=10mA, IB=1.0mA IC=50mA, IB=5.0mA IC=10mA, IB=1.0mA IC=50mA, IB=5.0mA VCE=5.0V, IC=1.0mA VCE=5.0V, IC=10mA VCE=5.0V, IC=50mA VCE=10V, IC=150mA 250 220 7.0 100 100 75 25 ♦ Enhanced specification MAX 50 50 50 100 150 1.00 1.00 300 UNITS V V V mA mW °C °C/W UNITS nA μA nA V V V mV mV V V R...