CMPT6517 NPN CMPT6520 PNP
SURFACE MOUNT COMPLEMENTARY HIGH VOLTAGE
SILICON TRANSISTORS
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CMPT6517
NPN CMPT6520
PNP
SURFACE MOUNT COMPLEMENTARY HIGH VOLTAGE
SILICON
TRANSISTORS
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DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT6517 and CMPT6520 are complementary silicon
transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high voltage driver and amplifier applications.
MARKING CODES: CMPT6517: C1Z CMPT6520: C2Z
SOT-23 CASE
MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Continuous Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance
SYMBOL
VCBO VCEO VEBO
IC IB PD TJ, Tstg ΘJA
350 350 5.0 500 250 350 -65 to +150 357
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
ICBO IEBO IEBO BVCBO BVCEO BVEBO BVEBO VCE(SAT) VCE(SAT) VCE(SAT) VCE(SAT) VBE(SAT) VBE(SAT) VBE(SAT) VBE(ON) hFE hFE
VCB=250V VEB=5.0V (CMPT6517) VEB=4.0V (CMPT6520) IC=100µA IC=1.0mA IE=10µA (CMPT6517) IE=10µA (CMPT6520) IC=10mA, IB=1.0mA IC=20mA, IB=2.0mA IC=30mA, IB=3.0mA IC=50mA, IB=5.0mA IC=10mA, IB=1.0mA IC=20mA, IB=2.0mA IC=30mA, IB=3.0mA IC=10V, IC=100mA VCE=10V, IC=1.0mA VCE=10V, IC=10mA
350 350 6.0 5.0
20 30
MAX 50 50 50
0.30 0.35 0.50 1.0 0.75 0.85 0.90 2.0
UNITS V V V mA mA
mW °C °C/W
UNITS nA nA nA V V V V V V V V V V V V
R5 (1-February 2010)
CMPT6517
NPN CMPT6520
PNP
SURFACE MOUNT COMPLEMENTARY HIGH VOLTAGE
SILICON
TRANSISTORS
ELECTR...