N-Channel MOSFET
Product Summary
V(BR)DSS 30V
RDS(on)
760m @ VGS = 4.5V 930m @ VGS = 2.5V 1500mΩ @ VGS = 1.8V
ID TA = +25°C
0.65A
0....
Description
Product Summary
V(BR)DSS 30V
RDS(on)
760m @ VGS = 4.5V 930m @ VGS = 2.5V 1500mΩ @ VGS = 1.8V
ID TA = +25°C
0.65A
0.58A
0.45A
Description
This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Applications
Load switch Portable applications Power Management Functions
DMN3900UFA
30V N-CHANNEL ENHANCEMENT MODE MOSFET
Features
0.4mm ultra low profile package for thin application 0.48mm2 package footprint, 16 times smaller than SOT23 Low VGS(th), can be driven directly from a battery Low RDS(on) ESD Protected Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: X2-DFN0806-3 Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish – NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208 e4 Weight: 0.00043 grams (approximate)
ESD PROTECTED
X2-DFN0806-3 Bottom View
Drain
S D
G
Top View Package Pin Configuration
Gate
Body Diode
Gate Protection Diode
Source
Equivalent Circuit
Ordering Information (Note 4)
Part Number DMN3900UFA-7B
Marking NU
Reel size (inches) 7
Tape width (mm) 8
Quantity per reel 10,000
Notes:
1. No purposely added lead. Fully EU Direc...
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