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DMN4020LFDE Dataheets PDF



Part Number DMN4020LFDE
Manufacturers Diodes
Logo Diodes
Description 40V N-Channel MOSFET
Datasheet DMN4020LFDE DatasheetDMN4020LFDE Datasheet (PDF)

ADVANCE INFORMATION Product Summary BVDSS 40V RDS(ON) max 20mΩ @ VGS = 10V 28mΩ @ VGS = 4.5V ID max TA = +25°C 8.0A 6.7A Description and Applications This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications. • General Purpose Interfacing Switch • Power Management Functions U-DFN2020-6 (Type E) DMN4020LFDE 40V N-CHANNEL ENHANCEMENT MODE MOSFET Features a.

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ADVANCE INFORMATION Product Summary BVDSS 40V RDS(ON) max 20mΩ @ VGS = 10V 28mΩ @ VGS = 4.5V ID max TA = +25°C 8.0A 6.7A Description and Applications This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications. • General Purpose Interfacing Switch • Power Management Functions U-DFN2020-6 (Type E) DMN4020LFDE 40V N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits • 0.6mm Profile – Ideal for Low Profile Applications • PCB Footprint of 4mm2 • Low Gate Threshold Voltage • Low On-Resistance • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • For automotive applications requiring specific change control (i.e.: parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please refer to the related automotive grade (Q-suffix) part. A listing can be found at https://www.diodes.com/products/automotive/automotiveproducts/. • This part is qualified to JEDEC standards (as references in AEC-Q) for High Reliability. https://www.diodes.com/quality/product-definitions/ Mechanical Data • Case: U-DFN2020-6 (Type E) • Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020 • Terminals: Finish – NiPdAu over Copper Leadframe. Solderable per MIL-STD-202, Method 208 e4 • Weight: 0.0065 grams (Approximate) D Bottom View Pin Out G S Equivalent Circuit Ordering Information (Note 4) Part Number DMN4020LFDE-7 DMN4020LFDE-13 Marking NE NE Reel Size (inches) 7 13 Quantity Per Reel 3000 10,000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. DMN4020LFDE Datasheet number: DS35819 Rev. 5 - 2 1 of 7 www.diodes.com March 2020 © Diodes Incorporated ADVANCE INFORMATION YM DMN4020LFDE Marking Information Site 1: NE NE = Product Type Marking Code YM = Date Code Marking Y = Year (ex: H = 2020) M = Month (ex: 9 = September) Date Code Key Year 2013 … 2019 2020 2021 2022 Code A … G H I J Month Code Jan Feb Mar Apr May Jun 1 2 3 4 5 6 2023 K Jul 7 2024 L Aug 8 2025 M Sep 9 2026 N Oct O 2027 O Nov N 2028 P Dec D Site 2: Date Code Key Year Code Week Code Internal Code Code 2020 0 Sun T 2021 1 2022 2 1-26 A-Z Mon U NE = Product Type Marking Code YWX = Date Code Marking Y = Year (ex: H = 2020) W = Week (ex: a = week 27; z represents week 52 and 53) X = Internal code (ex: U = Monday) 2023 3 Tue V 2024 4 27-52 a-z Wed W 2025 5 Thu X 2026 6 2027 7 53 z Fri Y 2028 8 Sat Z DMN4020LFDE Datasheet number: DS35819 Rev. 5 - 2 2 of 7 www.diodes.com March 2020 © Diodes Incorporated DMN4020LFDE ADVANCE INFORMATION Maximum Ratings (@TA = +25°C, unless otherwise specified.) Drain-Source Voltage Gate-Source Voltage Characteristic Continuous Drain Current (Note 6) VGS = 10V Continuous Drain Current (Note 6) VGS = 4.5V Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) Maximum Body Diode Continuous Current Steady State t < 10s Steady State t < 10s TA = +25°C TA = +70°C TA = +25°C TA = +70°C TA = +25°C TA = +70°C TA = +25°C TA = +70°C Symbol VDSS VGSS ID ID ID ID IDM IS Value 40 ±20 8.0 6.3 9.5 7.5 6.7 5.3 8.0 6.4 32 2.5 Unit V V A A A A A A Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Total Power Dissipation (Note 5) Characteristic Thermal Resistance, Junction to Ambient (Note 5) Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Thermal Resistance, Junction to Case (Note 6) Operating and Storage Temperature Range TA = +25°C TA = +70°C Steady State t < 10s TA = +25°C TA = +70°C Steady State t < 10s Symbol PD RθJA PD RθJA RθJC TJ, TSTG Value 0.66 0.42 189 132 2.03 1.31 61 43 9.3 -55 to +150 Unit W °C/W W °C/W °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = +25°C Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Static Drain-Source On-Resistance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = 4.5V) Total Gate Charge (VGS = 10V) Ga.


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