Document
ADVANCE INFORMATION
Product Summary
BVDSS 40V
RDS(ON) max 20mΩ @ VGS = 10V 28mΩ @ VGS = 4.5V
ID max TA = +25°C
8.0A
6.7A
Description and Applications
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications. • General Purpose Interfacing Switch • Power Management Functions
U-DFN2020-6 (Type E)
DMN4020LFDE
40V N-CHANNEL ENHANCEMENT MODE MOSFET
Features and Benefits
• 0.6mm Profile – Ideal for Low Profile Applications • PCB Footprint of 4mm2 • Low Gate Threshold Voltage • Low On-Resistance • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • For automotive applications requiring specific change
control (i.e.: parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please refer to the related automotive grade (Q-suffix) part. A listing can be found at https://www.diodes.com/products/automotive/automotiveproducts/. • This part is qualified to JEDEC standards (as references in AEC-Q) for High Reliability. https://www.diodes.com/quality/product-definitions/
Mechanical Data
• Case: U-DFN2020-6 (Type E) • Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020 • Terminals: Finish – NiPdAu over Copper Leadframe. Solderable
per MIL-STD-202, Method 208 e4 • Weight: 0.0065 grams (Approximate)
D
Bottom View
Pin Out
G
S
Equivalent Circuit
Ordering Information (Note 4)
Part Number DMN4020LFDE-7 DMN4020LFDE-13
Marking NE NE
Reel Size (inches) 7 13
Quantity Per Reel 3000 10,000
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and
Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.
DMN4020LFDE
Datasheet number: DS35819 Rev. 5 - 2
1 of 7 www.diodes.com
March 2020
© Diodes Incorporated
ADVANCE INFORMATION
YM
DMN4020LFDE
Marking Information
Site 1:
NE
NE = Product Type Marking Code YM = Date Code Marking Y = Year (ex: H = 2020) M = Month (ex: 9 = September)
Date Code Key
Year
2013
…
2019
2020
2021
2022
Code
A
…
G
H
I
J
Month Code
Jan
Feb
Mar
Apr
May
Jun
1
2
3
4
5
6
2023 K
Jul 7
2024 L
Aug 8
2025 M
Sep 9
2026 N
Oct O
2027 O
Nov N
2028 P
Dec D
Site 2:
Date Code Key Year Code
Week Code
Internal Code Code
2020 0
Sun T
2021 1
2022 2
1-26 A-Z
Mon U
NE = Product Type Marking Code YWX = Date Code Marking Y = Year (ex: H = 2020) W = Week (ex: a = week 27; z represents week 52 and 53) X = Internal code (ex: U = Monday)
2023 3
Tue V
2024 4
27-52 a-z
Wed W
2025 5
Thu X
2026 6
2027 7
53 z
Fri Y
2028 8
Sat Z
DMN4020LFDE
Datasheet number: DS35819 Rev. 5 - 2
2 of 7 www.diodes.com
March 2020
© Diodes Incorporated
DMN4020LFDE
ADVANCE INFORMATION
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 6) VGS = 10V
Continuous Drain Current (Note 6) VGS = 4.5V
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) Maximum Body Diode Continuous Current
Steady State
t < 10s
Steady State
t < 10s
TA = +25°C TA = +70°C TA = +25°C TA = +70°C TA = +25°C TA = +70°C TA = +25°C TA = +70°C
Symbol VDSS VGSS ID
ID
ID
ID IDM IS
Value 40 ±20
8.0 6.3
9.5 7.5
6.7 5.3
8.0 6.4
32 2.5
Unit V V A
A
A
A A A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Total Power Dissipation (Note 5)
Characteristic
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 6) Operating and Storage Temperature Range
TA = +25°C TA = +70°C Steady State
t < 10s
TA = +25°C
TA = +70°C Steady State
t < 10s
Symbol PD
RθJA
PD
RθJA RθJC TJ, TSTG
Value 0.66 0.42 189 132 2.03 1.31 61 43 9.3
-55 to +150
Unit W
°C/W W
°C/W °C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = +25°C Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = 4.5V) Total Gate Charge (VGS = 10V) Ga.