Document
HFP10N60U
HFP10N60U
600V N-Channel MOSFET
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 29 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 0.67 ȍ7\S #9GS=10V 100% Avalanche Tested
Feb 2013
BVDSS = 600 V RDS(on) typ = 0.67 ȍ ID = 9.5 A
TO-220
1 23
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25 unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM VGS EAS IAR EAR dv/dt
Drain-Source Voltage
Drain Current Drain Current Drain Current
– Continuous (TC = 25)
– Continuous (TC = 100)
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
600 9.5 6.0 38 ρ30 470 9.5 16.4 4.5
PD
Power Dissipation (TC = 25) - Derate above 25
164 1.32
TJ, TSTG TL
Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds
-55 to +150 300
Thermal Resistance Characteristics
Symbol RșJC RșCS RșJA
Parameter Junction-to-Case Case-to-Sink Junction-to-Ambient
Typ. -0.5 --
Max. 0.76
-62.5
Units V A A A V mJ A mJ
V/ns W
W/
Units
/W
క͑΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͢͝ͷΖΓ͑ͣͤ͑͢͡
HFP10N60U
Package Marking and Odering Information
Device Marking Week Marking
Package
Packing
HFP10N60U
YWWX
TO-220
Tube
HFP10N60U
YWWXg
TO-220
Tube
Quantity 50 50
RoHS Status Pb Free
Halogen Free
Electrical Characteristics TC=25 qC unless otherwise specified
Symbol
Parameter
Test Conditions
Min
On Characteristics
VGS RDS(ON)
Gate Threshold Voltage Static Drain-Source On-Resistance
VDS = VGS, ID = 250 Ꮃ VGS = 10 V, ID = 4.75 A
2.5 --
Off Characteristics
BVDSS ǻBVDSS
/ǻTJ
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient
IDSS Zero Gate Voltage Drain Current
IGSS Gate-Body Leakage Current
Dynamic Characteristics
VGS = 0 V, ID = 250 Ꮃ
ID = 250 Ꮃ, Referenced to 25
VDS = 600 V, VGS = 0 V VDS = 480 V, TC = 125 VGS = ρ30 V, VDS = 0 V
600
--
----
Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance
Switching Characteristics
VDS = 25 V, VGS = 0 V, f = 1.0 MHz
----
td(on) Turn-On Time tr Turn-On Rise Time
td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge
Qgs Gate-Source Charge Qgd Gate-Drain Charge
VDS = 300 V, ID = 9.5 A, RG = 25
(Note 4,5)
VDS = 480V, ID = 9.5 A, VGS = 10 V
(Note 4,5)
Source-Drain Diode Maximum Ratings and Characteristics
--------
IS Continuous Source-Drain Diode Forward Current
--
ISM Pulsed Source-Drain Diode Forward Current
--
VSD Source-Drain Diode Forward Voltage IS = 9.5 A, VGS = 0 V
--
trr Reverse Recovery Time Qrr Reverse Recovery Charge
IS = 9.5 A, VGS = 0 V diF/dt = 100 A/ȝV (Note 4)
---
Typ Max Units
-0.67
4.5 0.8
V
-- -- V
0.6 -- V/
-- 1 Ꮃ -- 10 Ꮃ -- ρ100 Ꮂ
1600 140 11
2100 180 14.5
Ꮔ Ꮔ Ꮔ
50 100 70 140 160 320 60 120 29 38 8.5 -9 --
Ꭸ Ꭸ Ꭸ Ꭸ nC nC nC
-- 9.5 -- 38 -- 1.4 340 --
3.3 --
A
V Ꭸ ȝ&
Notes ;
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L=9.6mH, IAS=9.5A, VDD=50V, RG=25:, Starting TJ =25qC 3. ISD$, di/dt$ȝV, VDD%9DSS , Starting TJ =25 qC 4. Pulse Test : Pulse Width ȝV'XW\&\FOH
5. Essentially Independent of Operating Temperature
క͑΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͢͝ͷΖΓ͑ͣͤ͑͢͡
HFP10N60U
Typical Characteristics
ID, Drain Current [A]
DS(ON)R [:], Drain-Source On-Resistance
VGS Top : 15.0 V
10.0 V 8.0 V 7.0 V 101 6.5 V 6.0 V Bottom : 5.5 V
* Notes : 1. 300us Pulse Test 2. TC = 25oC
VDS, Drain-Source Voltage [V]
Figure 1. On Region Characteristics
1.2
1.0
VGS = 10V 0.8
0.6 VGS = 20V
Note : T = 25oC J
0.4 0 3 6 9 12 15 18 21
ID, Drain Current [A]
Figure 3. On Resistance Variation vs Drain Current and Gate Voltage
2400 2000 1600 1200
Ciss Coss
C = C + C (C = shorted) iss gs gd ds
Coss = Cds + Cgd Crss = Cgd
800 * Note ; 1. V = 0 V
GS
2. f = 1 MHz
400 Crss
0 10-1 100 101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
VGS, Gate-Source Voltage [V]
IDR, Reverse Drain Current [A]
ID, Drain Current [A]
10 25oC
150oC
-55oC
* Notes : 1. VDS= 30V 2. 300us Pulse Test
0.1 2 4 6 8 10
VGS, Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
10
1 150oC 25oC
0.1 0.0
* Notes : 1. VGS= 0V 2. 300us Pulse Test
0.2 0.4 0.6 0.8 1.0
VSD, Source-Drain Voltage [V]
1.2
Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature
12 VDS = 120V
10 VDS = 300V VDS = 480V
8
6
4
2
Note : I = 9.5A D
0 0 5 10 15 20 25 30
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
క͑΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͢͝ͷΖΓ͑ͣͤ͑͢͡
Capacitances [pF]
HFP10N60U
Typical Characteristics
BVDSS, (Normalized) Drain-Source Breakdown Voltage
ID, Drain Current [A]
1.2
1.1
1.0
0.9 0.8
-100
Note : 1. VGS = 0 V 2. I = 250PA
D
-50 0 50 100 150
T , Junction Temp.