Document
HFP5N50U
HFP5N50U
500V N-Channel MOSFET
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 13 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) ȍ7\S #9GS=10V 100% Avalanche Tested
May 2012
BVDSS = 500 V RDS(on) typ ȍ ID = 5.0 A
TO-220
1 23
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25 unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM VGS EAS IAR EAR dv/dt
Drain-Source Voltage
Drain Current Drain Current Drain Current
– Continuous (TC = 25)
– Continuous (TC = 100)
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
500 5.0 3.2 20 ρ30 230 5.0 9.8 4.5
PD
Power Dissipation (TC = 25) - Derate above 25
98 0.78
TJ, TSTG TL
Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds
-55 to +150 300
Thermal Resistance Characteristics
Symbol RșJC RșCS RșJA
Parameter Junction-to-Case Case-to-Sink Junction-to-Ambient
Typ. -0.5 --
Max. 1.28
-62.5
Units V A A A V mJ A mJ
V/ns W
W/
Units
/W
క͑΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͢͝;ΒΪ͑ͣͣ͑͢͡
HFP5N50U
Package Marking and Odering Information
Device Marking Week Marking
Package
Packing
HFP5N50U
YWWX
TO-220
Tube
HFP5N50U
YWWXg
TO-220
Tube
Quantity 50 50
RoHS Status Pb Free
Halogen Free
Electrical Characteristics TC=25 qC unless otherwise specified
Symbol
Parameter
Test Conditions
Min
On Characteristics
VGS RDS(ON)
Gate Threshold Voltage Static Drain-Source On-Resistance
VDS = VGS, ID = 250 Ꮃ VGS = 10 V, ID = 2.5 A
2.5 --
Off Characteristics
BVDSS ǻBVDSS
/ǻTJ
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient
IDSS Zero Gate Voltage Drain Current
IGSS Gate-Body Leakage Current
Dynamic Characteristics
VGS = 0 V, ID = 250 Ꮃ
ID = 250 Ꮃ, Referenced to 25
VDS = 500 V, VGS = 0 V VDS = 400 V, TC = 125 VGS = ρ30 V, VDS = 0 V
500
--
----
Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance
Switching Characteristics
VDS = 25 V, VGS = 0 V, f = 1.0 MHz
----
td(on) Turn-On Time tr Turn-On Rise Time
td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge
Qgs Gate-Source Charge Qgd Gate-Drain Charge
VDS = 250 V, ID = 5.0 A, RG = 25
(Note 4,5)
VDS = 400V, ID = 5.0 A, VGS = 10 V
(Note 4,5)
Source-Drain Diode Maximum Ratings and Characteristics
--------
IS Continuous Source-Drain Diode Forward Current
--
ISM Pulsed Source-Drain Diode Forward Current
--
VSD Source-Drain Diode Forward Voltage IS = 5.0 A, VGS = 0 V
--
trr Reverse Recovery Time Qrr Reverse Recovery Charge
IS = 5.0 A, VGS = 0 V diF/dt = 100 A/ȝV (Note 4)
---
Typ Max Units
-- 4.5 1.2 1.5
V
-- -- V
0.5 -- V/
-- 1 Ꮃ -- 10 Ꮃ -- ρ100 Ꮂ
700 900 70 90 8.5 11
.