HFP8N65U

HFP8N65U HFP8N65U 650V N-Channel MOSFET FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 22.0 nC (Typ.) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) ȍ7\S #9GS=10V ‰ 100% Avalanche Tested March 2013 BVDSS = 650 V RDS(on) typ ȍ ID = 7.5 A TO-220 1 23 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25୅) – Continuous (TC = 100୅) – Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) 650 7.5 4.7 30 ρ30 280 7.5 15.0 4.5 PD Power Dissipation (TC = 25୅) - Derate above 25୅ 150 1.2 TJ, TSTG TL Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds -55 to +150 300 Thermal Resistance Characteristics Symbol RșJC RșCS RșJA Parameter Junction-to-Case Case-to-Sink Junction-to-Ambient Typ. -0.5 -- Max. 0.82 -62.5 Units V A A A V mJ A mJ V/ns W W/୅ ୅ ୅ Units ୅/W క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳͣ͝;ΒΣΔΙ͑ͣͤ͑͢͡ HFP8N65U Package Marking and Odering Information Device Marking Week Marking Package Packing HFP8N65U YWWX TO-220 Tube HFP8N65U YWWXg...