Document
HFS5N80
May 2013
HFS5N80
800V N-Channel MOSFET
BVDSS = 800 V RDS(on) typ ȍ ID = 5.0 A
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 30 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) ȍ7\S #9GS=10V 100% Avalanche Tested
TO-220F
1 21 3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25 unless otherwise specified
Symbol
Parameter
Value
VDSS ID
IDM VGS EAS IAR EAR dv/dt
Drain-Source Voltage
Drain Current Drain Current Drain Current
– Continuous (TC = 25ఁ͚͑
– Continuous (TC = 100ఁ͚͑
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
800 5.0* 3.1* 20* ρ30 450 5.0 4.7 4.5
PD Power Dissipation (TC = 25ఁ͚͑ ͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͞͵ΖΣΒΥΖ͑ΒΓΠΧΖ͑ͣͦఁ͑
TJ, TSTG
Operating and Storage Temperature Range
TL Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds
* Drain current limited by maximum junction temperature
47 0.38 -55 to +150
300
Thermal Resistance Characteristics
Symbol RșJC
RșJA
Junction-to-Case
Parameter
Junction-to-Ambient
Typ. ---
Max. 2.66 62.5
Units V A A A V mJ A mJ
V/ns W W/ఁ͑ ఁ͑
ఁ͑
Units
ఁ͠Έ͑
క͑΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͡͝;ΒΪ͑ͣͤ͑͢͡
HFS5N80
Electrical Characteristics TC=25 qC unless otherwise specified
Symbol
Parameter
Test Conditions
Min
On Characteristics
VGS RDS(ON)
Gate Threshold Voltage Static Drain-Source On-Resistance
VDS = VGS, ID = 250 Ꮃ͑ VGS = 10 V, ID = 2.5 A͑
2.5 --
Off Characteristics
BVDSS ԩBVDSS
/ԩTJ IDSS
IGSSF
IGSSR
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse
VGS = 0 V, ID = 250 Ꮃ͑ ID = 250 Ꮃ͑͝ΖΗΖΣΖΟΔΖΕ͑ΥΠͣͦఁ͑ VDS = 800 V, VGS = 0 V͑ VDS = 640 V, TC = 125ఁ͑ VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
800 -----
--
Dynamic Characteristics
Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V, f = 1.0 MHz͑
----
Switching Characteristics
td(on) Turn-On Time tr Turn-On Rise Time
td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge
Qgs Gate-Source Charge Qgd Gate-Drain Charge
VDS = 400 V, ID = 5.0 A, RG = 25 ͑ש ͑ ͙͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑ͿΠΥΖ͚͑ͥͦ͑͝
VDS = 640V, ID = 5.0 A, VGS = 10 V
͙ͿΠΥΖ͚͑ͥͦ͑͝
--------
Source-Drain Diode Maximum Ratings and Characteristics
IS Continuous Source-Drain Diode Forward Current
ISM Pulsed Source-Drain Diode Forward Current
VSD Source-Drain Diode Forward Voltage IS = 5.0 A, VGS = 0 V
trr Reverse Recovery Time Qrr Reverse Recovery Charge
IS = 5.0 A, VGS = 0 V diF/dt = 100 A/ȝV (Note 4)
------
Typ Max Units
-- 4.5 2.0 2.6
V ͑ש
-- -- V 0.9 -- ·͠ఁ͑ -- 1 Ꮃ͑ -- 10 Ꮃ͑ -- 100 Ꮂ͑
-- -100 Ꮂ͑
1150 100 15
1500 130 19.5
Ꮔ͑ Ꮔ͑ Ꮔ͑
30 70 Ꭸ͑ 85 180 Ꭸ͑ 45 100 Ꭸ͑ 55 120 Ꭸ͑ 30 39 Οʹ͑ 6 -- Οʹ͑ 15 -- Οʹ͑
-- 5.0 -- 20 -- 1.4 610 -4.7 --
A
V Ꭸ͑ ȝ&
Notes ;
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L=34mH, IAS=5.0A, VDD=50V, RG=25:, Starting TJ =25qC 3. ISD$GLGW$ȝV9DD%9DSS , Starting TJ =25 qC 4. Pulse Test : Pulse Width ȝV'XW\&\FOH
5. Essentially Independent of Operating Temperature
క͑΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͡͝;ΒΪ͑ͣͤ͑͢͡
HFS5N80
Typical Characteristics
ID, Drain Current [A]
ID, Drain Current [A]
RDS(on), [@ Drain-Source On-Resistance
VDS, Drain-Source Voltage [V]
Figure 1. On Region Characteristics
VGS, Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
IDR, Reverse Drain Current [A]
ID, Drain Current [A]
Figure 3. On Resistance Variation Drain Current and Gate Voltage
2400 2000
Ciss = Cgs + Cgd (Cds = shorted) C =C +C
oss ds gd
Crss = Cgd
1600 1200 800 400
Ciss
Coss * Notes :
1. V = 0 V GS
2. f = 1 MHz
Crss
0 10-1 100 101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
VGS, Gate-Source Voltage [V]
VSD, Source-Drain voltage [V]
Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature
12
10 VDS = 160V VDS = 400V
8 VDS = 640V
6
4
2 * Note : ID = 5.0A
0 0 6 12 18 24 30 36
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
క͑΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͡͝;ΒΪ͑ͣͤ͑͢͡
Capacitance [pF]
HFS5N80
Typical Characteristics (continued)
BVDSS, (Normalized) Drain-Source Breakdown Voltage
1.2
1.1
1.0
0.9 1. VGS = 0 V 2. ID ȝ $
0.8 -100 -50 0 50 100 150 200
TJ, Junction Temperature [oC]
Figure 7. Breakdown Voltage Variation vs Temperature
102 Operation in This Area is Limited by R
DS(on)
10 Ps
101 100 Ps 1 ms
10 ms 100 100 ms
DC
10-1 10-2
100
* Notes : 1. TC = 25 oC 2. TJ = 150 oC 3. Single Pulse
101 102
VDS, Drain-Source Voltage [V]
103
Figure 9. Maximum Safe Operating Area
RDS(ON), (Normalized) Drain-Source On-Resistance
ID, Drain Current [A]
3.0
2.5
2.0
.