HFS8N80

HFS8N80 Dec 2010 HFS8N80 800V N-Channel MOSFET BVDSS = 800 V RDS(on) typ = 1.55 ȍ ID = 8.0 A FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 35 nC (Typ.) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) : 1.55 ȍ (Typ.) @VGS=10V ‰ 100% Avalanche Tested TO-220F 123 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25ఁ͚ – Continuous (TC = 100ఁ͚ – Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) 800 8.0* 5.0* 32* ρͤ͡ 580 8.0 16.7 5.5 PD Power Dissipation (TC = 25ఁ͚ ͞ ͵ΖΣΒΥΖ͑ΒΓΠΧΖ͑ͣͦఁ TJ, TSTG Operating and Storage Temperature Range TL Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds * Drain current limited by maximum junction temperature 56 0.44 -55 to +150 300 Thermal Resistance Characteristics Symbol RșJC RșJA Junction-to-Case Parameter Junction-to-Ambient Typ. --- Max. 2.25 62.5 Units V A A A V mJ A mJ V/ns W W/ఁ ఁ ఁ Units ఁ͠Έ క ΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝͵ΖΔΖΞΓΖΣ͑ͣ͢͡͡ HFS8N80 Electrical Characteristics TC=25 qC unless otherwise specified Symbol Parameter Test Conditions ...