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FMX23S Dataheets PDF



Part Number FMX23S
Manufacturers Thinki Semiconductor
Logo Thinki Semiconductor
Description 10 Ampere Insulated Common Cathode Fast Recovery Half Bridge Rectifiers
Datasheet FMX23S DatasheetFMX23S Datasheet (PDF)

FMX22S thru FMX26S ® Pb Free Plating Product FMX22S/FMX23S/FMX24S/FMX26S Pb 10 Ampere Insulated Common Cathode Fast Recovery Half Bridge Rectifiers Features Latest GPP technology with super fast recovery time Low forward voltage drop High current capability Low reverse leakage current High surge current capability Application Automotive Inverters and Solar Inverters Plating Power Supply,SMPS,EPS and UPS Car Audio Amplifiers and Sound Device Systems ITO-220AB Unit:mm Mechanical Data Case.

  FMX23S   FMX23S



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FMX22S thru FMX26S ® Pb Free Plating Product FMX22S/FMX23S/FMX24S/FMX26S Pb 10 Ampere Insulated Common Cathode Fast Recovery Half Bridge Rectifiers Features Latest GPP technology with super fast recovery time Low forward voltage drop High current capability Low reverse leakage current High surge current capability Application Automotive Inverters and Solar Inverters Plating Power Supply,SMPS,EPS and UPS Car Audio Amplifiers and Sound Device Systems ITO-220AB Unit:mm Mechanical Data Case: Fully Isolated Molding TO-220FP Epoxy: UL 94V-0 rate flame retardant Terminals: Solderable per MIL-STD-202 method 208 Polarity: As marked on diode body Mounting position: Any Weight: 2.0 gram approximately Case Case Case Case Positive Negative Doubler Series Common Cathode Common Anode Tandem Polarity Tandem Polarity Suffix "S" Suffix "R" Suffix "U" Suffix "UR" MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25oC ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. SYMBOL FMX22S FMX23S FMX24S Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current TC=100oC VRRM VRMS VDC IF(AV) 200 140 200 400 280 400 10.0 Peak Forward Surge Current, 8.3ms single Half sine-wave superimposed on rated load (JEDEC method) IFSM 100 Maximum Instantaneous Forward Voltage @ 5.0 A VF 0.98 1.3 Maximum DC Reverse Current @TJ=25oC At Rated DC Blocking Voltage @TJ=125oC Maximum Reverse Recovery Time (Note 1) Typical junction Capacitance (Note 2) Typical Thermal Resistance (Note 3) Operating Junction and Storage Temperature Range IR Trr CJ R JC TJ, TSTG 5.0 100 35 65 2.2 -55 to +150 NOTES : (1) Reverse recovery test conditions IF = 0.5A, IR = 1.0A, Irr = 0.25A. (2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC. (3) Thermal Resistance junction to case. FMX26S UNIT 600 V 420 V 600 V A A 1.7 V uA uA nS pF oC/W oC Rev.06 © 1995 Thinki Semiconductor Co., Ltd. Page 1/2 http://www.thinkisemi.com.tw/ FMX22S thru FMX26S ® AVERAGE FORWARD RECTIFIED CURRENT, AMPERES IINSTANTANEOUS FORWARD CURRENT, AMPERES FIG.1 - FORWARD CURRENT DERATING CURVE 10 8 6 4 2 60 Hz Resistive or Inductive load 0 0 50 100 CASE TEMPERATURE, oC 150 FIG.3 - TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS 50 FMX22S FMX23S/FMX24S 5 FMX26S 1 TJ=25oC PULSE WIDTH=300uS 1% DUTY CYCLE 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 INSTANTANEOUS FORWARD VOLTAGE, VOLTS INSTANTANEOUS REVERSE CURRENT, MICROAMPERES PEAK FORWARD SURGE CURRENT, AMPERES FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT 100 Pulse Width 8.3ms Single Half-Sire-Wave (JEDEC Method) 80 60 40 20 0 1 10 100 NUMBER OF CYCLES AT 60Hz FIG.4 - TYPICAL REVERSE CHARACTERISTICS 1000 TJ=125oC 100 10 TJ=25oC 1 0.1 0 20 40 60 80 100 PERCENT OF RATED PEAK REVERSE VOLTAGE,% FIG.5 - TYPICAL JUNCTION CAPACITANCE 1000 TJ = 25oC f = 1.0 MHZ Vsig = 50mVp-p 100 JUNCTION CAPACITANCE, pF 10 0.1 1.0 4.0 10 REVERSE VOLTAGE, VOLTS 100 Rev.06 © 1995 Thinki Semiconductor Co., Ltd. Page 2/2 http://www.thinkisemi.com.tw/ .


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